Used TEL / TOKYO ELECTRON A303i #9261571 for sale

TEL (TOKYO ELECTRON) TEL / TOKYO ELECTRON A303i diffusion furnace is a specialized semiconductor fabrication tool designed to deposit epitaxial films on silicon substrates. It is commonly used by chip makers in the fabrication of microprocessors and other electronic components. TEL A303i has a high temperature thermal chamber, which is enclosed by a heat-resistant ceramic heater panel. Inside the thermal chamber, a heated crucible is used to diffuse the material being deposited. The substrate is placed in the nucleus of the thermal chamber, and heated evenly by the ceramic heater panel. Additionally, the multi-zone temperature control feature allows temperature uniformity and stability over the entire substrate surface. The temperature range of TOKYO ELECTRON A 303 I is 300-1400°C, and the temperature can be controlled within ±1°C. TEL / TOKYO ELECTRON A 303 I also has a built-in automatic mass flow controller (MFC), allowing precise delivery of the reactant gases to the heated crucible. The MFC regulates the amount of reactant gas that is delivered to the chamber, ensuring repeatability and accuracy in the epitaxial layer deposition process. Additionally, the pressure inside the chamber can be precisely controlled with the built-in vacuum pump. To ensure a uniform and high-quality epitaxial layer deposition process, TOKYO ELECTRON A303i is equipped with an advanced gas shower equipment. This system consists of two independent gas lines, with adjustable shower pressures. This ensures a uniform layer thickness and uniform gas distribution across the substrate. Moreover, A 303 I is equipped with several safety features, such as over-temperature and over-pressure alarms. It also includes a real-time monitoring unit which provides performance data about the deposition process, including gas flow and temperature. This feature allows for greater process control and regulation. In summary, TEL A 303 I diffusion furnace is a specialized semiconductor fabrication tool that is suitable for producing high-quality epitaxial layers on silicon substrates. It is equipped with an advanced gas shower machine and multi-zone temperature control feature, allowing for precise and repeatable layer deposition processes. Additionally, the built-in safety features ensure maximum safety for the users.