Used TEL / TOKYO ELECTRON Alpha 303i-K #293690686 for sale
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TEL / TOKYO ELECTRON Alpha 303i-K is a diffusion furnace and accompanying accessories designed to help with the process of doping semiconductors in the microelectronics industry. It is a highly efficient diffusion furnace with an extremely low thermal budget of 200°C/sec temperature ramp rate and a temperature uniformity of 0.1°C or better. The furnace can work with both 3" and 4" wafer sizes and is capable of doping up to seven dies of wafers in an unloaded ampoule. TEL ALPHA 303IK features a ruggedized autolift quartz ampoule drive equipment that ensures stable and accurate operation. The furnace is heated via a resistance heating system and the quarts boron nitride coated walls are designed to provide good thermal stability for high-temperature processing. It has an excellent thermal uniformity through a controlled combination of well-designed quartz baffles and temperature ramps that range from 0-100°C/s. The ampoule is loaded with either inert gas or ArCl2 mixture to ensure proper doping. TOKYO ELECTRON ALPHA 303 I K uses optical pyrometry to monitor the temperature inside the furnace and ensures the uniformity throughout the chamber. Moreover, it also includes a touch screen LCD controller with a graphical interface to facilitate process optimization. TOKYO ELECTRON Alpha 303i-K is equipped with an In-situ pressure monitor to improve the uniform distribution of the dopant gas in the furnace. It also comes with a water interlock unit to protect the furnace from excessive water pressure, thereby ensuring safe operation. TEL / TOKYO ELECTRON ALPHA 303 I K comes with a range of accessories designed to improve wafer loading accuracy, prevent wafer drift, and provide easy and efficient handling of wafers with an imported Auto Handle Load Port. Overall, Alpha 303i-K is an excellent diffusion furnace with high quality thermal uniformity, a wide temperature ramp range, and a ruggedized autolift quartz ampoule drive machine. It can provide accurate and efficient doping of up to seven dies of wafers with a range of powerful accessories to support a variety of other processes.
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