Used TEL / TOKYO ELECTRON Alpha 303i-KVCFN #9381864 for sale

TEL / TOKYO ELECTRON Alpha 303i-KVCFN
ID: 9381864
Wafer Size: 12"
Vintage: 2007
Furnace, 12" Process: DCS-HTO Heater type: FTP VOS-56-003 4 Zone With RCU Gases: N2, NH3, SiH2Cl2, N2O, SiH4 2007 vintage.
TEL / TOKYO ELECTRON Alpha 303i-KVCFN is a vertical single wafer diffusion furnace used to grow high-performance materials such as polysilicon, silicon germanium, and amorphous silicon on semiconductor substrates. This furnace is capable of high temperature processing up to 1250 degrees Celsius with a uniform temperature of ±2 degrees Celsius. TEL Alpha 303i-KVCFN provides high throughput performance with low maintenance requirements and high-performance cycling rates up to 16 wafers per hour. Furthermore, this furnace is equipped with a multi-zone susceptor with independent susceptor temperature control technology, which enables precise temperature control on a single wafer basis. TOKYO ELECTRON Alpha 303i-KVCFN also features a low-emission, energy-saving construction with an advanced computer control equipment to provide precise temperature control and long-term reliability. Alpha 303i-KVCFN provides uniform temperature distribution due to the direct air-cooling construction. The air temperature at the bottom of the heating chamber is cooled by a cold air stream generated by a dedicated low-noise axial fan. This ensures uniform temperatures around the furnace and thus supports even wafer growth. Moreover, it includes a thermally isolated cold wall to reduce heat ingress and improve temperature uniformity. TEL / TOKYO ELECTRON Alpha 303i-KVCFN delivers unprecedented performance through a host of features. These include a high-end temperature control system to provide precise temperature control with a wide temperature range; an advanced gas injection unit that helps maintain uniform temperatures and gas mixing; a high-precision valved gas manifold for precise concentration control; a ramp rate up to 6000°C/hr and a lingering temperature up to 500°C; a P-kinetic energy source for rapid nucleation of silicon films; and a modular design for easy maintenance and upgrades. In addition, TEL Alpha 303i-KVCFN uses entirely nonplasma technology to ensure clean and safe operation. It includes a chlorine-free gas injection machine that eliminates formation of the hazardous by-product Sulfur Hexafluoride (SF6). Lastly, safety is maintained through the use of an interlock tool to guarantee uninterrupted operation and prevent personnel injury. TOKYO ELECTRON Alpha 303i-KVCFN is an advanced diffusion furnace that provides uniform temperature, precise temperature control, and high throughput for the growth of high-performance materials. Its unique features make it an ideal solution for the fabrication and development of integrated circuits and other semiconductor devices.
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