Used TEL / TOKYO ELECTRON Alpha 303i-KVCFN #9381866 for sale

TEL / TOKYO ELECTRON Alpha 303i-KVCFN
ID: 9381866
Wafer Size: 12"
Vintage: 2005
Furnace, 12" Process: DCS-HTO Heater type: FTP VOS-56-003 4 Zone With RCU Gases: N2, NH3, SiH2Cl2, N2O, SiH4 2005 vintage.
TEL / TOKYO ELECTRON Alpha 303i-KVCFN is a diffusion furnace and accessory tailored to achieving high effective doping for complex silicon wafer processing. This industrial-grade apparatus utilizes the Kappa-V Czochralski (KVC) floating-zone method of crystal growth on semiconductor chips. The equipment offers users two KVC lamps, integrated with a three-zone graphite susceptor system for effective heating and even growth of wafers. TEL Alpha 303i-KVCFN features a large, water-cooled quartz chamber with controllable temperature to effectively facilitate thermosyphon circulation of high-purity process gases. Its power supply base unit is designed to provide smooth and precise voltage for each KVC lamp to guarantee consistent, precision operation. The furnace also features independent temperature control for the upper, middle and lower zones, offering total process control. TOKYO ELECTRON Alpha 303i-KVCFN utilizes a special bar graph unit to enable users to monitor and compare the temperature differences of each zone. Furthermore, the chamber features special design elements for increased oxidation resistance. This greatly enhances the longevity of the furnace and allows for safe operation over a longer period of time. Alpha 303i-KVCFN's Graphite susceptor is designed to allow precise temperature control throughout the process during both semiconductor crystal growth and deposition. This is further enhanced by the ex vacuo quartz chamber, which regulates temperature and pressure for improved quality and efficient operation. Additionally, the machine's high-purity gas delivery tool ensures effective doping action over the entire wafer, eliminating hotspots and other issues. In summary, TEL / TOKYO ELECTRON Alpha 303i-KVCFN is an industrial-grade diffusion furnace and structure with many technological advancements to ensure successful doping for complex silicon wafer processing. This asset offers improved temperature control, enhanced oxidation resistance and high-purity gas delivery for improved quality.
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