Used TEL / TOKYO ELECTRON Alpha 808SC-Z #9083658 for sale

TEL / TOKYO ELECTRON Alpha 808SC-Z
ID: 9083658
Vintage: 1997
Vertical LPCVD Process: Si, SiN, HTO 1997 vintage.
TEL / TOKYO ELECTRON Alpha 808SC-Z is a diffusion furnace equipped with a variety of accessories to assist with wafer processing. This diffusion furnace is an upgrade to the popular Alpha 808SC model. It features improved temperature uniformity and wafer contact, making it ideal for both epitaxial growth and the most demanding thermal processes. The furnace is designed with a vertical structure and a choice of two controlled atmospheres: N2 (nitrogen) or mixed N2/H2 (nitrogen/hydrogen). The temperature range is 50 to 1000°C, and the maximum temperature capability can be extended above 1000°C with an optional graphite susceptor and heater. The high temperature capability makes this diffusion furnace well-suited for advanced device development processes such as high-k dielectrics and metal gates. The significant advantage of this diffusion furnace is its capability of accommodating eight 6" square wafers in a 4x2 configuration at the same time. It has high-precision positioning for reliable endothermic gas flow, and temperature uniformity can be adjusted over the entire furnace area. Other features include cassettes and wafer holders with built-in temperature measurement capabilities, and a range of safety features, such as a built-in nitrogen purge system to protect against oxidation. Furthermore, the diffusion furnace supports online monitoring and data collection using its SECS/GEM compliant software. This enables operators to efficiently manage the entire process, from furnace setup to wafer processing. TEL Alpha 808SC-Z diffusion furnace is a powerful and reliable tool for wafer processing. It offers superior temperature uniformity, improved wafer contact, and can accommodate a variety of substrates and process gases. With its high-precision temperature control, high-end safety features, and SECS/GEM compliant software, this diffusion furnace is an excellent choice for advanced device development.
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