Used TEL / TOKYO ELECTRON Alpha 8SE-ZVANS #293590988 for sale
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TEL / TOKYO ELECTRON Alpha 8SE-ZVANS is a diffusion furnace and accessories equipment designed for semiconductor fabrication. It is capable of sub-micron patterns and conductive metal deposition. The system has a thermally insulated chamber and adjustable air intake and exhaust vents. Its large chamber size and efficient temperature control can meet extremely high detail processes, such as 3D structures, dual-level metallization, and high aspect ratio vias. The unit can process wafers up to 8 inches in diameter. In addition, its powerful Nc-controlled motion machine provides the capability to precisely control all facets of the diffusion process. TEL Alpha 8SE-ZVANS diffusion furnace offers ultra-high temperature accuracy and reliability. Its automated Computer Controlled Tool (CCS) can precisely maintain and monitor temperature, pressure, and other parameters throughout the diffusion process. It uses an advanced thermal insulation to maintain stable temperature throughout the chamber. The exceptional temperature control asset and programmable valve enable accurate control of deposition, annealing, and doping. TOKYO ELECTRON Alpha 8SE-ZVANS diffusion furnace comes with a fully automated transfer model to move and lower load onto the furnace. It is designed for ergonomics and safe unloading for high throughput of semiconductor devices. Furthermore, it features an integrated silicon wafer monitoring equipment to ensure that the wafers are free from contamination. Alpha 8SE-ZVANS diffusion furnace also contains a latch system which enables fast and efficient loading and unloading of wafers. It also offers adjustable back pressure to maintain consistent chamber conditions during the entire diffusion process. Moreover, it has integrated cooling fans for rapid cooling of the entire unit. TEL / TOKYO ELECTRON Alpha 8SE-ZVANS diffusion furnace and accessories machine is designed for robust and reliable performance. With its large chamber size, adjustable temperature and pressure conditions, and temperature uniformity, it serves as an ideal choice for diffusion of advanced semiconductor devices.
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