Used TEL / TOKYO ELECTRON Formula #9090494 for sale

TEL / TOKYO ELECTRON Formula is an etcher/asher that is used to etch semiconductor wafers in semiconductor device fabrication process. It is a physical vapor deposition (PVD) etcher that uses reactive ion etching (RIE) to remove material from a target substrate. It is capable of etching high aspect ratio features with a very tight range of profiles. Typically, it is used to etch features such as trenches, recessed contact vias and other features which are useful in the production of MEMS and 3D integrated circuits. TEL Formula etcher uses an inductively coupled plasma (ICP) source to generate the reactive species necessary for etching. The ICP source is part of an advanced Class-IIC cleanroom equipment which is equipped with a Triple Gas™ reactor and a high performance vacuum system. This allows the cleaning and etching of surfaces down to ultra-low levels of impurities without contamination of surfaces. TOKYO ELECTRON Formula etcher uses high-frequency RF power to generate a uniform plasma in the plasma process chamber. This plasma is then used to sustain a high ion flux and directed to the substrate. This allows high ion yields for the etching of even very thin features with very low feature sizes and aspect ratios. Formula etcher is also equipped with two additional sources of etch species. These include Argon and Oxygen ICP sources. Argon ICP is used to etch via holes and trench openings of less than 70 µm, as well as holes in symmetrical strip lines and alignment layers. Oxygen ICP enables etching of conformal structures with very low aspect ratios, due to its reactive ion etching process. In terms of process control, TEL / TOKYO ELECTRON Formula etcher offers a range of options. This includes a sophisticated control unit with an embedded computer, a high-speed data recorder and a thermal monitoring machine. The software package includes a wide range of pre-set and user-defined etch recipes for different applications. TEL Formula is an advanced etcher that is capable of etching microstructures with high aspect ratios and reproducibility. Its integrated components allow very high precision etching of a vast range of applications while eliminating contamination from surfaces during the etching process. This makes it an ideal choice for a wide range of device fabrication processes.