Used AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 for sale

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ID: 9233106
Wafer Size: 8"
Vintage: 1998
Metal etcher, 8" Wafer shape: SNNF Chamber type / Location: Position A: (D+) Metal DPS+ Position B: (D+) Metal DPS+ Position C: (S+) ASP With enhancements Position D: (S+) ASP With enhancements Position E: STD Cool down Position F: (OA) Orienter Electrical requirements: Line frequency: 50 Hz EMO Guard ring Smoke detector at controller Smoke detector at MF Chamber A / B metal DPS+: Metal DPS R1 chamber: Upper chamber body: Anodizing Electrostatic chuck type: Polyamide ESC Turbo pump: SEIKO SEIKI STPH 1303C Upper chamber o-ring: Viton Dome: Rough DTCU: E DTCU Endpoint type: Monochromator Bias generator: ENI OEM-12B3 Bias match: Standard Capture ring: STD Polyamide ESC Source generator: Standard, 2500 W Slit valve o-ring: Viton Gate valve: TGV VAT65 Series Process control: Manometer (0.1 mtorr, 10 torr) Chamber foreline With heating jacket Cathode assy: Single type BCL3 Gas line block: Heater with watlow He UPC: MKS 649 Wafer lift cylinder: SMC Metal ASP+ chamber options: Process kit: Chuck O-Ring: Silicon Applicator: ASP+ Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW Wave guide: Phase MSG isolator MAGNETRON Head: MKS Process control: Manometer (10 torr, 100 torr) GDP Kit: Quartzware Slit valve o-ring: Viton Plasma tube o-ring: KALREZ Generator: AX2115 VDS Heater: VDS Gas line / Final valve heater Gas delivery options: VDS Type: Ultra clean Pallet options: Valve: FUJIKIN / VERIFLO Transducer: MILLIPORE / MKS852 Regulator: VERIFLO Filter: MILLIPORE Transducer: Display per stick MFC Type: Unit 8161 Gas panel pallet A / B: Pallet: 4/6 Gas line configuration: CL2: 200 SCCM BCL3: 100 SCCM N2: 20 SCCM CHF3: 20 SCCM O2: 500 SCCM SF6: 200 SCCM AR-S: 200 SCCM (2) Pallet corrosive gas lines (5) Pallet inert gas lines (7) Filters Gas panel pallet C / D: Pallet: 0/4 Gas line configuration: O2: 5 SLM N2-S: 1 SLM (3) Pallet inert gas lines (3) Filters Gas panel facilities: Top feed multi line drop Gas panel exhaust: Top Gas panel controller: VME I Mainframe: Facilities type: Regulated Facilities orientation: Mainframe facilities back connection Loadlock / Cassette options: Loadlock type: WBLL With autorotation Loadlock platform: UNIVERSAL Loadlock cover finish: Anti static painted Loadlock slit valve o-ring type: Viton Wafer mapping: Enhanced Integrated cassette sensor Transfer chamber options: Transfer chamber manual LID hoist Robot type: CENTURA VHP+ Robot blade: Roughened AL blade Wafer on blade detector Loadlock: Bottom vent Front panel: Anti static painted Signal light tower System monitors: Monitor type: CRT Monitor AC Rack: GFI: 30 mAMP Type: AC Gen rack, 84" Controller facility interface: Remote UPS interface Generator Rack: Cooling water: Manifold type Manifold facilities: Compression tube fittings, 3/4" Heat exchanger: H2000 DI EG Cathode H2000 DI EG Wall H2000 DI EG ASP Wall Heat exchanger interface Pump interface 1998 vintage.
AMAT / APPLIED MATERIALS Centura 5200 Phase II is a dry-etching/ashing equipment designed for deep silicon etching/ashing and photomask repair. The system provides excellent etch/ash uniformity and enables very high selectivities between different materials. AMAT Centura 5200 Phase II can process wafers up to 8" in diameter with an etching/ashing time up to 10 minutes. APPLIED MATERIALS Centura 5200 Phase II is a single wafer processor designed to provide high-precision etching and ashing of various on-wafer materials. The unit includes a showerhead RF (Radio Frequency) source, gas delivery machine, RF generator, digital MFC (mass flow controller), and exclusive Ultra-Shear gas entraining process. The hot inert gas is mixed with process gases to increase etching/ashing rates. The RF generator utilizes an innovative dual-frequency design which provides a broad power range and allows for optimal etching/ashing recipes. Centura 5200 Phase II offers an advanced etching/ashing module for greater precision and uniformity. The module utilizes a linear motion stage and a dual-side loadlock to transport wafers between vacuum chambers. The chamber contains a planar inductor, gas delivery tool, and RF coupling technology for direct RF power delivery to the wafers. The chamber body is equipped with robust, vibration-resistant components to ensure reliable operation for continuous etching/ashing. AMAT / APPLIED MATERIALS Centura 5200 Phase II asset provides very tight end-point control through OES (optical endpoint detection) and monitoring of the monitored parameters such as etch rate,profile depth and etching uniformity. The model also features a powerful etch process monitor which accurately calculates the etch rate every few seconds and allows higher process precision. AMAT Centura 5200 Phase II also enables advanced photomask repair capabilities, such as removal and replacement of patterned features. APPLIED MATERIALS Centura 5200 Phase II offers a modular design to allow for easy maintenance and upgrade capability. The equipment utilizes a simple graphical user interface for configuring and operating the system. Additionally, the unit has the capability to download recipes from remote locations or through a USB port. This allows for easy recipe optimization or recipe transfers to other systems. Overall, Centura 5200 Phase II is a versatile, advanced dry-etching/ashing machine offering excellent uniformity and high selectivity between different materials and an array of features that allow for optimized recipes and photomask repair.
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