Used AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 for sale
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ID: 9233106
Wafer Size: 8"
Vintage: 1998
Metal etcher, 8"
Wafer shape: SNNF
Chamber type / Location:
Position A: (D+) Metal DPS+
Position B: (D+) Metal DPS+
Position C: (S+) ASP With enhancements
Position D: (S+) ASP With enhancements
Position E: STD Cool down
Position F: (OA) Orienter
Electrical requirements:
Line frequency: 50 Hz
EMO Guard ring
Smoke detector at controller
Smoke detector at MF
Chamber A / B metal DPS+:
Metal DPS R1 chamber:
Upper chamber body: Anodizing
Electrostatic chuck type: Polyamide ESC
Turbo pump: SEIKO SEIKI STPH 1303C
Upper chamber o-ring: Viton
Dome: Rough
DTCU: E DTCU
Endpoint type: Monochromator
Bias generator: ENI OEM-12B3
Bias match: Standard
Capture ring: STD Polyamide ESC
Source generator: Standard, 2500 W
Slit valve o-ring: Viton
Gate valve: TGV VAT65 Series
Process control: Manometer (0.1 mtorr, 10 torr)
Chamber foreline
With heating jacket
Cathode assy: Single type
BCL3 Gas line block: Heater with watlow
He UPC: MKS 649
Wafer lift cylinder: SMC
Metal ASP+ chamber options:
Process kit: Chuck
O-Ring: Silicon
Applicator: ASP+
Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW
Wave guide: Phase MSG isolator
MAGNETRON Head: MKS
Process control: Manometer (10 torr, 100 torr)
GDP Kit: Quartzware
Slit valve o-ring: Viton
Plasma tube o-ring: KALREZ
Generator: AX2115
VDS Heater: VDS Gas line / Final valve heater
Gas delivery options:
VDS Type: Ultra clean
Pallet options:
Valve: FUJIKIN / VERIFLO
Transducer: MILLIPORE / MKS852
Regulator: VERIFLO
Filter: MILLIPORE
Transducer: Display per stick
MFC Type: Unit 8161
Gas panel pallet A / B:
Pallet: 4/6
Gas line configuration:
CL2: 200 SCCM
BCL3: 100 SCCM
N2: 20 SCCM
CHF3: 20 SCCM
O2: 500 SCCM
SF6: 200 SCCM
AR-S: 200 SCCM
(2) Pallet corrosive gas lines
(5) Pallet inert gas lines
(7) Filters
Gas panel pallet C / D:
Pallet: 0/4
Gas line configuration:
O2: 5 SLM
N2-S: 1 SLM
(3) Pallet inert gas lines
(3) Filters
Gas panel facilities: Top feed multi line drop
Gas panel exhaust: Top
Gas panel controller: VME I
Mainframe:
Facilities type: Regulated
Facilities orientation: Mainframe facilities back connection
Loadlock / Cassette options:
Loadlock type: WBLL With autorotation
Loadlock platform: UNIVERSAL
Loadlock cover finish: Anti static painted
Loadlock slit valve o-ring type: Viton
Wafer mapping: Enhanced
Integrated cassette sensor
Transfer chamber options:
Transfer chamber manual LID hoist
Robot type: CENTURA VHP+
Robot blade: Roughened AL blade
Wafer on blade detector
Loadlock: Bottom vent
Front panel: Anti static painted
Signal light tower
System monitors:
Monitor type: CRT Monitor
AC Rack:
GFI: 30 mAMP
Type: AC Gen rack, 84"
Controller facility interface: Remote UPS interface
Generator Rack:
Cooling water: Manifold type
Manifold facilities: Compression tube fittings, 3/4"
Heat exchanger:
H2000 DI EG Cathode
H2000 DI EG Wall
H2000 DI EG ASP Wall
Heat exchanger interface
Pump interface
1998 vintage.
AMAT / APPLIED MATERIALS Centura 5200 Phase II is a dry-etching/ashing equipment designed for deep silicon etching/ashing and photomask repair. The system provides excellent etch/ash uniformity and enables very high selectivities between different materials. AMAT Centura 5200 Phase II can process wafers up to 8" in diameter with an etching/ashing time up to 10 minutes. APPLIED MATERIALS Centura 5200 Phase II is a single wafer processor designed to provide high-precision etching and ashing of various on-wafer materials. The unit includes a showerhead RF (Radio Frequency) source, gas delivery machine, RF generator, digital MFC (mass flow controller), and exclusive Ultra-Shear gas entraining process. The hot inert gas is mixed with process gases to increase etching/ashing rates. The RF generator utilizes an innovative dual-frequency design which provides a broad power range and allows for optimal etching/ashing recipes. Centura 5200 Phase II offers an advanced etching/ashing module for greater precision and uniformity. The module utilizes a linear motion stage and a dual-side loadlock to transport wafers between vacuum chambers. The chamber contains a planar inductor, gas delivery tool, and RF coupling technology for direct RF power delivery to the wafers. The chamber body is equipped with robust, vibration-resistant components to ensure reliable operation for continuous etching/ashing. AMAT / APPLIED MATERIALS Centura 5200 Phase II asset provides very tight end-point control through OES (optical endpoint detection) and monitoring of the monitored parameters such as etch rate,profile depth and etching uniformity. The model also features a powerful etch process monitor which accurately calculates the etch rate every few seconds and allows higher process precision. AMAT Centura 5200 Phase II also enables advanced photomask repair capabilities, such as removal and replacement of patterned features. APPLIED MATERIALS Centura 5200 Phase II offers a modular design to allow for easy maintenance and upgrade capability. The equipment utilizes a simple graphical user interface for configuring and operating the system. Additionally, the unit has the capability to download recipes from remote locations or through a USB port. This allows for easy recipe optimization or recipe transfers to other systems. Overall, Centura 5200 Phase II is a versatile, advanced dry-etching/ashing machine offering excellent uniformity and high selectivity between different materials and an array of features that allow for optimized recipes and photomask repair.
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