Used AMAT / APPLIED MATERIALS Centura ACP DPN HD Gate #9300031 for sale

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ID: 9300031
Wafer Size: 12"
Vintage: 2014
EPI System, 12" Process: DPHe Type: Decoupled plasma nitride (2) Load ports Remote components: (4) SMC INR-498-012D-X007 Heat exchangers Power supply: 3 Phase, 200-208 V, 50/60 Hz, 23 A (4) EDWARDS iH600 Vacuum pumps Power supply: 200-208 V, 26.7 A, 3-Phase, 60 Hz Chemicals used: 50/50 Di/Glycol Chemicals used: N2, PCW (4) RF Generators (2) IPUP Does not include Hard Disk Drive (HDD) Power supply: 208 VAC, 3-Phase 2014 vintage.
AMAT / APPLIED MATERIALS Centura ACP DPN HD Gate is a state-of-the-art electrochemical asher / etcher designed to improve layer-to-layer uniformity in semiconductor device processing. The etcher / asher has several unique advantages over traditional etch and ash processing techniques for semiconductor fabrication. AMAT Centura ACP DPN HD Gate is the first Dry Photoresist (DPN) etcher / asher to implement High Density Gate (HDG) technology. HDG technology is based on the use of a focus rod to reduce the gap between the etcher / ash gate and the surface of the wafer. This design allows higher etch rates, better uniformity and reduced metal concentration in the etch gas. The ACP DPN HDG Gate also offers improved selectivity and surface damage tolerance. This etcher / asher uses a low-temperature plasma source to create a plasma cloud, which allows for a high level of selectivity between the various types of materials on the wafer surface. This selectivity reduces surface damage and increases process yield. In terms of overall performance, AMAT Centura ACP DPN HDG Gate is able to etch etched layers with an impressive etch rate, uniformity and selectivity. Its high temperature-handling capability allows for consistent step coverage during etching, while its low temperature plasma source allows for the small-scale features needed to achieve high-performance semiconductor devices. APPLIED MATERIALS Centura ACP DPN HDG Gate is an advanced etcher / asher designed to help optimize layer-to-layer uniformity in semiconductor device processing. This etcher / asher offers improved etch rate, uniformity, selectivity and surface damage tolerance over traditional etch / ash processing. Its HDG technology and low-temperature plasma source greatly reduce the gap between the etcher / ash gate and the wafer surface, increasing the yield of the process and allowing for the production of high-performance semiconductor devices.
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