Used CORIAL ICP Etcher #293758417 for sale

CORIAL ICP Etcher is a cutting-edge plasma etching equipment designed for the precise and efficient removal of material layers from semiconductor substrates. This innovative tool integrates inductively coupled plasma (ICP) technology with advanced process control capabilities to deliver superior etching performance and exceptional process uniformity across a wide range of materials and applications. At the core of ICP Etcher lies its high-density plasma source, generated by a radiofrequency (RF) power supply coupled with a coil that induces a strong electromagnetic field in the process chamber. This ICP source generates a highly ionized and energetic plasma that is essential for achieving high etching rates while maintaining excellent selectivity and sidewall profile control. The ICP source operates independently of the process pressure, allowing for precise tuning of ion energy and directionality to optimize etching parameters for different materials and geometries. The plasma etching process in CORIAL ICP Etcher involves the interaction of reactive gas molecules and ions with the substrate surface, resulting in the physical and chemical removal of material layers through a series of complex reactions. The system is equipped with a gas delivery unit that allows for the precise control of process gases, such as etchants, precursors, and diluents, to tailor the etching chemistry and selectivity for specific material stacks and device structures. Additionally, the machine features a dedicated gas injection showerhead design that ensures uniform gas distribution and efficient purging of byproducts during the etching process. ICP Etcher offers a wide range of etching modes, including isotropic, anisotropic, and hybrid etching, to accommodate various device designs and patterning requirements. The tool's process chamber is equipped with an electrostatic chuck (ESC) that securely holds the substrate in place during etching and facilitates efficient heat transfer for temperature control. The ESC can be biased to control substrate charging effects and improve etch uniformity across the wafer surface. To ensure precise process control and monitoring, CORIAL ICP Etcher is equipped with a sophisticated plasma impedance matching network and RF power control asset that continuously adjusts the power delivered to the ICP source based on plasma conditions and process requirements. The model also features real-time endpoint detection capabilities, such as optical emission spectroscopy (OES) and laser interferometry, to accurately monitor etch rates and detect the completion of the etching process. In addition to its advanced process capabilities, ICP Etcher is designed with user-friendly software interface and intuitive recipe management equipment that allows for easy setup and optimization of etching processes. The system's automation capabilities enable high-throughput processing of substrates with minimal operator intervention, making it an ideal solution for both research and production environments. Overall, CORIAL ICP Etcher represents a state-of-the-art plasma etching tool that combines cutting-edge technology with advanced process control features to deliver superior etching performance and process flexibility for a wide range of semiconductor fabrication applications.