Used GASONICS / NOVELLUS Aura 3010 #293752958 for sale

GASONICS / NOVELLUS Aura 3010
ID: 293752958
Asher.
GASONICS / NOVELLUS Aura 3010 is an dry etch / asher tool used in semiconductor fabrication processes. It is a single-wafer, single-chamber system that is capable of using process gases to selectively etch and anisotropically etch high aspect ratio structures on a semiconductor wafer. GASONICS Aura 3010 is capable of using various process gases including Ar/CF4/CHF3, Ar/O2, Ar/H2/H2O, and Ar/CF4/O2. It has an Ultima™ Source for sputtering, capable of utilizing both reactive ion etching (RIE) and physical sputtering for etching or depositing thin films. The 2-D pattern generator is used to create high aspect ratio features, and features up to 50 nm in size can be created with the tool. It also has a 2-D global viewer/magnetron monitor to check pattern features and uniformity during the etching process. The tool's preclean anneal chamber provides for annealing and cleaning of the etch reaction chamber prior to etching. It also contains a radio frequency (RF) bias to reduce etch selectivity and improve etch profile. The real-time control system allows the user to monitor, change and optimize the etch parameters to maximize etch uniformity and minimize etch damage. Pressure, temperature and cryo-cooling capacitors are also integrated to provide accurate and repeatable temperature control. The integrated plasma system has an adjustable wafer temperature control range of 10-100°C. It also has a frequency response which provides a better distribution of energy deposition on the wafer and improved plasma uniformity. In addition, the tool has a feature to reduce RF power pulsing during unstable etching, resulting in improved process uniformity. NOVELLUS Aura 3010 removes the need to use multiple processing systems to etch tight features and high aspect ratios on a semiconductor wafer. It is an excellent tool for the most demanding semiconductor processes and provides rapid, reliable, and repeatable processing with high etching rate and selectivity.
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