Used LAM RESEARCH 2300 Versys #9101595 for sale
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ID: 9101595
Wafer Size: 12"
Vintage: 2008
Polysilicon etcher, 12"
Conducting layer dry etching system
23PM, MW 1PM System
(4) Chambers
2300 Transport module
(3) 2300 Kiyo45 etch process module
2300 Micro wave strip process module
(3) LSR Endpoint
Gas system:
Gas interface box, 3PM (IGS GB)
(3) 9 Gas configuration
(3) Additional gas line (AGS)/total 16 lines
(3) Two heated gas line
US option:
System UPS circuity
Seismic bracket (TM/PM/MWS)
System weight dispersion plate (for TM/PM/RPM)
ELB with ring lug - Qty 1
(3) Keyence BCR carrier ID
User interface: side monitor UI
(25) Slot input buffer station
Japanese safety label
Intermitted Buzzer
ULPA filter interlock
Service step for PM
(3) FOUP Config.
Additional gas line for MWS
(3) Label for gas name and flow direction
(3) Duct manifold exhaust PM to GB
Chamber A:
Chamber type:MWS
Gas config. (sccm)=MFC full scale
N2(1000), O2(5000), H2/N2(2000)
MW 2.45GHz, max 3000W
Stage heater max 300°C
Chamber B:
Chamber type:Kiyo45
Gas config. (sccm)=MFC full scale
SiCL4(100), CF4(300), CL2(200), NF3(500),
HBr(500), NF3(50), CH2F2(100), CHF3(300),
SF6(50), N2(100), O2(30), O2(500),
Ar(500), He(500)
Source 13.56MHz, max 1500W
Bias 13.56MHz, max 1500W
Stage heater max 70°C
Chamber C:
Chamber type:Kiyo45
Gas config. (sccm)=MFC full scale
SiCL4(100), CF4(300), CL2(200), NF3(500),
HBr(500), NF3(50), CH2F2(100), CHF3(300),
SF6(50), N2(100), O2(30), O2(500),
Ar(500), He(500)
Source 13.56MHz, max 1500W
Bias 13.56MHz, max 1500W
Stage heater max 70°C
Chamber D:
Chamber type:Kiyo45
Gas config. (sccm)=MFC full scale
SiCL4(100), CF4(300), CL2(200), NF3(500),
HBr(500), NF3(50), CH2F2(100), CHF3(300),
SF6(50), N2(100), O2(30), O2(500),
Ar(500), He(500)
Source 13.56MHz, max 1500W
Bias 13.56MHz, max 1500W
Stage heater max 70°C
Damaged/missing parts:
PM1 MW Generator, ASTEX FI20160-3
PM3 TMP Controller , Edwards SCU-1500
PM4 TMP Controller, Edwards SCU-1500
2008 vintage.
LAM RESEARCH 2300 Versys Kiyo 45 is an etch/ash equipment designed for enhanced automation and process performance in today's semiconductor fabrication process. LAM RESEARCH 2300 VERSYS KIYO45 tools offer a reliable, powerful, and efficient solution for plasma etching and reactive ion etching (ash) of silicon based materials. The improved automation capabilities of these tools make them ideal for high throughput batch processing of wafers with typical run-times of less than two minutes. 2300 Versys Kiyo 45 etch/ash system utilizes a diode-pumped laser in order to provide a highly controlled concentration of reactive ions for the etch and ash processes. The high-power laser is capable of producing low-level hydrogen halide or helium-oxygen (HEOM) gases to break chemical bonds and remove material layers from wafers with high precision. The etch/ash process is performed by controlling the temperature, pressure, reagent concentrations, and power level of the laser. This allows for highly accurate and repeatable results every time. 2300 VERSYS KIYO45 has three main chambers, including an etch chamber, an ash chamber, and a purge chamber. The etch chamber uses a plasma source to generate the reactive ions, while the ash chamber utilizes a vacuum technique to deposit a thin layer of passivating material onto the wafer. Both chambers use independent pressure control and temperature profiling systems to ensure repeatable, reliable results. The purge chamber is designed to quickly clean the chambers between process cycles, allowing for faster batch processing times. LAM RESEARCH 2300 Versys Kiyo 45 is also equipped with advanced safety systems, including a self-test unit that evaluates the health of the machine and repairs any errors before the process starts. The protective enclosure of the machine also features fire and gas detection systems, anti-static protection, air temperature monitoring, and emergency shutdown systems. LAM RESEARCH 2300 VERSYS KIYO45 provides an efficient and reliable solution for etch/ash processes, allowing for high-throughput fabrication of semiconductor devices.
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