Used LAM RESEARCH 4420 #9103269 for sale

LAM RESEARCH 4420 is an etcher / asher designed for semiconductor applications. It is ideal for performing etch, metal deposition, and resist strip processes. This tool combines high throughput with dramatically improved process control and repeatability, allowing for short cycle times and accuracy. It has the ability to process up to twenty-four wafers in a single batch. 4420 etching chamber is capable of accommodating 200mm and 300mm wafers. It is equipped with a high-pressure quench valve and a variety of power sources including DC magnetron, microwave plasma, and DC bias. The two deposition sources, Electron Assisted Deposition (EAD) and Reactive Gas Deposition (RGD) provide excellent deposition films at a much lower cost. The Oxide Etch and Nitride Etch plasma sources run in the same equipment enabling dual etch operations. LAM RESEARCH 4420 etcher offers consistently uniform etch profiles with high repeatability. It provides a uniform profile application over area of multiple wafers for high throughput. The system offers excellent control of key process variables such as chamber pressure, RF bias power, RF shielding power, RF forwarding power, and etch plasma pulse rate. 4420 etching unit is outfitted with advanced data acquisition technology. It captures data points concerning gas flows, atmospheric conditions, and exhaust values with the help of a non-contacting temperature sensor and a non-contacting wafer radius sensor. An advanced gas flow delivery machine with a flow-by-flow exhaust valve offers excellent control of the etch process. LAM RESEARCH 4420 also features an advanced diagnostic device which includes automatic process capability analysis, yield analysis and SPC. Equipment diagnostics and maintenance programs have been simplified for user convenience. An automated purge tool eliminates the need for manual cleaning operations. 4420 has been designed for long-term reliability with the latest prober and wafer handling technology. It has a standard cycle time of 30 minutes and a maximum process time of 1 hour. Its maximum throughput is 100-200 wafers / hour. This asset is designed for precise process control, repeatability and long-term reliability.