Used LAM RESEARCH 4500 #9137678 for sale

LAM RESEARCH 4500 is a high-performance etcher / asher designed for thermal and non-thermal etching processes. It features a patented Dual Mono Pump (DMP) technology which enables low-pressure dry etching of demanding materials such as gallium arsenide (GaAs). 4500 has a chamber dimensions of 600mm X 450mm X 400mm and is equipped with a pneumatic linear shutter positioning system, which robustly positions the shutter for accurate local area etching. The system also has a self-aligning robot arm with two manual attach points that can accommodate up to a 150mm wafer size, allowing for accurate and repeatable etching. LAM RESEARCH 4500 is engineered to provide highly reliable and repeatable etching. It has a unique Dual Mono Pump (DMP) technology which allows for simultaneous Etch in Monova (EiM) and Reactive Ion Etching (RIE) of complex etching profiles in a single process step. This enables the user to achieve higher etch rates at lower pressures, resulting in lower material consumption and improved processing times. 4500 is also equipped with an Integrated Source Heater controller which allows for precise control of the source temperature in order to minimize material consumption and minimize loss of process repeatability. In addition to DMP, LAM RESEARCH 4500 features additional technologies such as High Density Plasma (HDP) and End Point Vacuum (EPV) to improve etching results. HDP generates high-ionized plasma with a very small size to extract more ions out of the chamber, resulting in higher etch rates and improved uniformity. Meanwhile, EPV ensures that the etch chamber is rapidly pumped down to the desired vacuum pressure, thereby reducing uneven etching of the substrate surfaces. 4500 is designed for safe and efficient operation with intuitive point-and-click user interface. The system is primarily used for the manufacturing of complex microelectronic devices such as logic, memory, and RF (radio frequency) components. It offers a reliable, high repeatable etching process for various types of materials including gallium arsenide (GaAs), silicon (Si), silicon germanium (SiGe), and silicon on insulator (SOI).