Used LAM RESEARCH 4520i #9196534 for sale

Name: LAM RESEARCH 4520i
Brand: LAM RESEARCH
SKU: 9196534
Availability: InStock

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Etchers / Ashers

Manufacturer

LAM RESEARCH

Model

4520i

ID: 9196534

Wafer Size: 6"

Vintage: 2004

Etcher, 6" Verity enhanced endpoint detection LAM RF Generator rack: ISO AE RFG 1250 RF generator Chamber process kit parts: Attachment ring Upper and lower baffles Electrode clamp ring Filler ring lower clamp Focus ring edge lower Bottom wafer clamp Single wafer Flat notch orientation Integrated isotropic-anisotropic etching Wafer temperature control: Reduced loading effects Variable gap spacing: Wide process flexibility Parallel plate reactor: Proven etch technology Inductive RF auto tuning: Fast accurate RF tuning for precise control Thermal oxide etch rate: ≥ 4500 A/min BPSG Etch rate: >7500 A/min TEOS Etch rate: >5000 A/min Uniformity: +/- 10% 3 Selectivity BPSG/TEOS to poly: >15:1 Particles: 0.3μm size Does not include dry pumps or chiller 2004 vintage.

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LAM RESEARCH 4520i is a fully automated, single-chamber plasma-affinity gas etcher/asher designed to deliver the most precise etching and ashing processes available. The equipment is capable of supporting multiple technologies, such as reactive ion etching (RIE), inductively coupled plasma (ICP), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. This type of etching and ashing process is suitable for use in a wide variety of applications including the fabrication of semiconductor devices, hard disks, flat panel displays, and other advanced substrates. 4520i is equipped with a flexible array of source capabilities for any combination of etching or ashing. It includes a unique cryogenic capacitively-coupled source along with it's traditional ICP source for custom applications. LAM RESEARCH 4520i's ability to produce extremely precise results makes it suitable for high density, ultra-fine line etching and ashing needs. Furthermore, the process window is large enough to accommodate a wide variety of gases and application applications. Additionally, 4520i features an in-situ gas cleanser to reduce process contamination and improve productivity. It also utilizes onboard sensors to ensure process consistency and a highly efficient auto-load system to reduce processing time. The unit's controller is designed to operate quickly and accurately in a variety of environments. LAM RESEARCH 4520i is highly adaptive, offering a wide range of parameters to be altered to accommodate the requirements of any given application. It utilizes a wide variety of materials, and is capable of both low and high pressure etching, along with a range of different temperature and power levels. The machine's uniform temperature distribution within the process chamber provides uniform and consistent results. 4520i is highly efficient and cost-effective and is ideal for most etching and ashing applications.