Used LAM RESEARCH 4720 #293640844 for sale

Manufacturer
LAM RESEARCH
Model
4720
ID: 293640844
Etcher.
LAM RESEARCH 4720 is a high-performance etcher/asher equipment for use in the semiconductor fabrication industry. It comes with an 8-inch substrate plate, a tooling plate for multiple substrate loading, five source plates, and two RF generators for high-speed wafer etching. The system features an intuitive open architecture design and can handle up to sixteen substrates per transfer. The unit also offers precise position control and a multi-gas delivery capability. 4720 can be used for plasma etching, cryogenic etching, and ashing of a variety of substrate materials, including silicon, titanium, aluminum, gold, and copper. The precision tuneable RF generator offers precisely controlled plasma parameters for repeatable etching recipes with high-quality results. Its fast, efficient, and non-contaminating etch process removes any unwanted materials from the substrate surface, allowing for precise device features. Other features include high-precision perforated plates to enable superior uniformity and high-throughput gas delivery systems to ensure low-dissipation rates. In addition, the machine also supports high aspect ratio etching and the ability to etch through thick layers. LAM RESEARCH 4720 is capable of preconditioning, pre-cleaning and post-deposition cleaning of the etch chamber. It is designed with a large bubbler tank and recirculating heater to ensure that the bath and chamber temperature remain stable and consistent during etching operations. It also comes with a vacuum line vacuum interface, which helps reduce contamination and makes the tool more reliable. The integrated chamber vision asset provides an enhanced view of the process, enabling wafer alignment, process monitoring, and diagnostics. 4720 provides superior accuracy, reliability and repeatability for complex etching and cleaning operations. It is an ideal model for the demanding requirements of today's advanced semiconductor device fabrication processes.
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