Used LAM RESEARCH 9600 #9354013 for sale

Name: LAM RESEARCH 9600
Brand: LAM RESEARCH
SKU: 9354013
Availability: InStock

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Etchers / Ashers

Manufacturer

LAM RESEARCH

Model

9600

ID: 9354013

Etcher Etch aluminum metal and TiW layers With vertical sidewalls suitable: 0.35 um line width Plasma medium-high density transformer coupled plasma Top electrode power and platen lower electrode power Water cooled platen Backside gas: He C12/BC13 Chemistry used for Al and SF6 for TiW Layers TiW Etching Cl-Passivation step Cl-Chemistry: AI203 Layers and silicon trenches With minimum undercut Process gases: CI2, BCI3, HBr, SF6, CF4, Ar, N2, 02, He Process pressure: 0-100 mTorr Top electrode power: 0-1250 W Lower electrode power 0-1200 W Process temperature: 55°C Adjustable monochromator Endpoint detection With Decoupled Source Quartz (DSQ) strip module AI Etching: Standard recipe: 600/601 Etch rate: 800 nm/min Photoresist etch rate: 400 nm/min AI203 Etching: Standard recipe: 640 Etch rate: 100-120 nm/min Substrate, 6" diameter Materials: AI AI203 Ti02 poly Si Nb Nitrides .

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LAM RESEARCH 9600 Etcher/Asher is a fully automated, ultra high-throughput, state-of-the-art etcher and asher. It is a multi-chambered equipment that can process a wide range of substrates. The production of intricate and precise features is what 9600 is built to do extremely well, while maintaining a long process unattended run time. LAM RESEARCH 9600 is designed to support multiple recipe dependent processes simultaneously. This is extremely useful in a manufacturing environment where variable or different processes may need to be run consecutively. 9600 offers users flexibility to choose between three primary processes such as etching, passivation and annealing. This flexibility is enabled by its four integrated process chambers, each capable of performing individual processes for up to 4 wafers. The etch chamber is unique, in that it allows for the use of multiple chemistry gases, such as fluorine, boron trichloride, oxygen, nitrogen trifluoride, sulfur hexafluoride and nitrogen dioxide. The passivation chamber is designed to perform a vapor chemical process, which treats the wafer with a layer of protection from heat, humidity, and chemical contamination. In order to provide the highest possible throughput, LAM RESEARCH 9600 is equipped with both vertical and horizontal transfer mechanisms. The horizontal transfer option is an automated load/unload platform, allowing for high-speed movement of materials between process chambers. This is especially useful when dealing with large batch sizes. 9600 offers ultra precision control over temperature, pressure, and gas flows throughout each process chamber. This precise control enables the creation of extremely precise features, with precise depth and width tolerances. The integrated metrology monitor tracks process parameters throughout the entire system, allowing for higher yield, reduced cycle time, and better process optimization. LAM RESEARCH 9600 runs off a powerful x86-based CPU with industry proven Linux® operating unit, capable of managing up to 200 recipes. Stable, repeatable results help ensure the highest etch and passivation quality, with minimal manual intervention. 9600 is a robust solution for those in need of a reliable and efficient etcher/asher. Its multi-chambered machine, precision control, and automated load/unload platform, give it the capabilities necessary to meet the demands of today's complex etching and passivation processes.