Used LAM RESEARCH IGS #9157989 for sale

LAM RESEARCH IGS (Ionized Gas Source) is a specialized etching/stripping tool used in the wafer fabrication process. It is used to etch and strip multiple films from the wafer surface. This etcher/asher is a High Density Plasma (HDP) tool, and operates in a unique way compared to other equipment. The process utilizes both plasma and vapor phase technologies to achieve ultra-low pressure and ultra-high precision etching. IGS consists of two main chambers, the main reaction chamber and the vapor phase reaction chamber. The main reaction chamber, the heart of the system, contains a process gas that is introduced into the chamber under high pressure. This pressure is directed towards the bottom of the substrate, allowing the ions to react with the etching resist and the underlying material and form a sputtered residue. After this reaction is complete, the upper part of the chamber is then purged with an inert carrier gas to remove any volatile etching products. The vapor phase reaction chamber is used for the stripping of films. In this chamber, a process gas is introduced at an elevated temperature, which causes the resist to vaporize and be removed from the substrate surface. An advanced temperature and gas flow control system is used to optimize the process for the removal of specific film types. LAM RESEARCH IGS is capable of achieving extremely high etching rates, low ion etching selectivity, high etch uniformity and high process stability. Furthermore, the etch rate can be controlled to a very precise degree, in order for imaging and lithography to be exact. Due to its advanced features, such as the integrated scrubber, IGS also combines high throughput with excellent safety standards. In conclusion, LAM RESEARCH IGS is a versatile etching/stripping tool that performs with high precision and high efficiency. With its advanced process control features, this etcher/asher is well-suited for the demanding needs of the wafer fabrication process.