Used LAM RESEARCH Rainbow 4420B #293712817 for sale

ID: 293712817
Wafer Size: 8"
Etcher, 8" Gas box (8 MFC) Open cassette type: HINE 38A E-Chuck CRT Monitor Remote monitor Fore-Line Process chamber Gas box CPU type: Pentium 133 MHZ Chamber: ESC, 8" Focus ring Face-upper ring electrode, ceramic Upper electrode Orifice filler, ceramic Upper baffle Lower baffle View window Cathode clamp ring Lifter wafer 4 pin new type Ring colling electrostaic Part number / Description 716-011009-001 / View window 853-001983R005-R / Endpoint dection 810-017086-010 / ESC power supply 853-011054-001 / MKS Chamber manometer 797-093824-203 / Unit pressure control 8130 he sccm 853-031764R-001 / Lift pin cylinder 796-006238-001 / Throttle valve controller 853-013541-002 / Assy throttle valve ADVANCED ENERGY RFG 1250 RF Generator: RF Power cord RF Cable TCU Signal cable TCU Channel to interconnect Part number / Description 5027-000-3 / ADVANCED ENERGY PDX-1250 RF Generator 853-015130-002 / Assy RF Match gear driven 810-017003-001 / PCB / DIP Transfer: Part number / Description 853-012100-003-C-230S / Robot (ELL and XLL) 853-012600-101 / Load index assy 853-029295-101 / Unload index assy 853-012261-001-4-230D / Inner door 853-140013-001-1-230 / Outer door 605-017016-100 / Assy stepper PCB Motor drive 853-029462-001 / XLL Wafer sensor VME PCB: Part number / Description 810-017034-005 / Assy PCB VME 68030 810-017031-004 / ASSY PCB ADIO-AO 810-017038-002 / SIO PCB 810-017388-003 / Ethernet address PCB Power supply: Part number / Description 660-091820-001 / DC Power supply: +24V 660-091821-001 / DC Power supply: 5V / 12V / 15V / 24V.
LAM RESEARCH 4420B is a dedicated plasma etcher/asher equipment designed for wet/dry processing of a wide range of substrates in both production and research and development applications. The integrated design consists of a load lock, process chamber, RF generator, temperature controllers, and vacuum pumping system. The load lock allows for loading of substrates into the process chamber, vacuum pumps evacuate the unit to process pressure and internal pressure gauges maintain it. The process chamber has a stainless-steel housing designed for a low-frequency, 13.56 MHz RF generator to produce a plasma between the electrodes. The RF generator produces enough power to generate Ar/O2/CF4 plasmas which increases the etch rate and improves the surface quality of the materials. A computerized temperature control machine operates the chamber to maintain a consistent temperature to provide a uniform etching/asching over an entire substrate. A variety of optional accessories for the etcher/asher such as temperature control, multiple substrate holders, a vacuum tool, and a purge gas inlet are also available. The optional accessories extend the capability and versatility of 4420B, enabling it to be used for a variety of processes, including alloy etching, direct writing, IC etching, etching and asching of Si, GaAs, and GaN layers, and nano-etching. The display and control panel of the etcher/asher provides intuitively designed and easy to use functions that allow users to monitor and control the process. The asset records all process data to ensure consistent and repeatable results. Additionally, it has a built-in safety override function, which stops the process in the event of an anomaly. LAM RESEARCH 4420B etcher/asher is simple, safe, and efficient with its robust integrated design. Its built-in features and optional accessories make it an ideal choice for creating the high quality etching and ashing needed for a variety of production and research and development applications.
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