Used LAM RESEARCH Rainbow 4420B #293712817 for sale
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ID: 293712817
Wafer Size: 8"
Etcher, 8"
Gas box (8 MFC)
Open cassette type: HINE 38A
E-Chuck
CRT Monitor
Remote monitor
Fore-Line
Process chamber
Gas box
CPU type: Pentium 133 MHZ
Chamber:
ESC, 8"
Focus ring
Face-upper ring electrode, ceramic
Upper electrode
Orifice filler, ceramic
Upper baffle
Lower baffle
View window
Cathode clamp ring
Lifter wafer 4 pin new type
Ring colling electrostaic
Part number / Description
716-011009-001 / View window
853-001983R005-R / Endpoint dection
810-017086-010 / ESC power supply
853-011054-001 / MKS Chamber manometer
797-093824-203 / Unit pressure control 8130 he sccm
853-031764R-001 / Lift pin cylinder
796-006238-001 / Throttle valve controller
853-013541-002 / Assy throttle valve
ADVANCED ENERGY RFG 1250 RF Generator:
RF Power cord
RF Cable
TCU Signal cable
TCU Channel to interconnect
Part number / Description
5027-000-3 / ADVANCED ENERGY PDX-1250 RF Generator
853-015130-002 / Assy RF Match gear driven
810-017003-001 / PCB / DIP
Transfer:
Part number / Description
853-012100-003-C-230S / Robot (ELL and XLL)
853-012600-101 / Load index assy
853-029295-101 / Unload index assy
853-012261-001-4-230D / Inner door
853-140013-001-1-230 / Outer door
605-017016-100 / Assy stepper PCB Motor drive
853-029462-001 / XLL Wafer sensor
VME PCB:
Part number / Description
810-017034-005 / Assy PCB VME 68030
810-017031-004 / ASSY PCB ADIO-AO
810-017038-002 / SIO PCB
810-017388-003 / Ethernet address PCB
Power supply:
Part number / Description
660-091820-001 / DC Power supply: +24V
660-091821-001 / DC Power supply: 5V / 12V / 15V / 24V.
LAM RESEARCH 4420B is a dedicated plasma etcher/asher equipment designed for wet/dry processing of a wide range of substrates in both production and research and development applications. The integrated design consists of a load lock, process chamber, RF generator, temperature controllers, and vacuum pumping system. The load lock allows for loading of substrates into the process chamber, vacuum pumps evacuate the unit to process pressure and internal pressure gauges maintain it. The process chamber has a stainless-steel housing designed for a low-frequency, 13.56 MHz RF generator to produce a plasma between the electrodes. The RF generator produces enough power to generate Ar/O2/CF4 plasmas which increases the etch rate and improves the surface quality of the materials. A computerized temperature control machine operates the chamber to maintain a consistent temperature to provide a uniform etching/asching over an entire substrate. A variety of optional accessories for the etcher/asher such as temperature control, multiple substrate holders, a vacuum tool, and a purge gas inlet are also available. The optional accessories extend the capability and versatility of 4420B, enabling it to be used for a variety of processes, including alloy etching, direct writing, IC etching, etching and asching of Si, GaAs, and GaN layers, and nano-etching. The display and control panel of the etcher/asher provides intuitively designed and easy to use functions that allow users to monitor and control the process. The asset records all process data to ensure consistent and repeatable results. Additionally, it has a built-in safety override function, which stops the process in the event of an anomaly. LAM RESEARCH 4420B etcher/asher is simple, safe, and efficient with its robust integrated design. Its built-in features and optional accessories make it an ideal choice for creating the high quality etching and ashing needed for a variety of production and research and development applications.
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