Used LAM RESEARCH SEZ 223 #293658158 for sale

LAM RESEARCH SEZ 223 is a plasma etcher and asher. This machine is designed to precisely etch and clean semiconductor wafers in a controlled atmosphere featuring both reactive ion etching (RIE) and Metal Organic Chemical Vapor Deposition (MOCVD). SEZ 223 utilizes a high-density RF plasma equipment which provides an ideal medium for efficient etching and clean-up operations. LAM RESEARCH SEZ 223 is equipped with an ICP (Inductively Coupled Plasma) source for processing, comprised of four individually adjustable RF channels for increased plasma control. This allows for accurate etching results with enhanced ion energy distributions and improved uniformity in wafer surfaces. The ICP source is capable of generating up to 8,000 watts of plasma with a base pressure of 10 mTorr, and can be maintained within 1 mTorr of target etching pressure and 10 kHz of target RF frequency. SEZ 223 is equipped with a gas delivery system that can handle three gas lines for precise pressure control, up to 5 gas sources, and precise gas ratios to achieve the desired etch results. This unit ensures accurate deposition and etching rates, allowing for precise control over the etching process. The sophisticated wafer handling machine of LAM RESEARCH SEZ 223 is designed to integrate with FOUP platforms. It enables precise wafer loading and unloading, orientation, and rotation of wafers at high speeds while providing complete process integration with the PECVD, RIE, and CMP process modules. SEZ 223's chamber is designed to produce the lowest particle and chamber loading rates, allowing for low defect rates in the final processed wafers. The design also allows for efficient cooling and vacuum buildup for improved throughput. Overall, LAM RESEARCH SEZ 223 is highly optimized for etching and ashing. Its powerful ICP source, precise gas delivery tool, sophisticated wafer handling asset, and low contamination chamber make it ideal for the efficient processing of semiconductor wafers.