Used LAM RESEARCH TCP 9400 DSIE #293737748 for sale
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ID: 293737748
Wafer Size: 8"
ICP Etcher, 8"
Gas chamber 1:
MFC / Gases / Size
1 / SF6 / 700 SCCM
2 / C4F8 / 300 SCCM
3 / CHF3 / 200 SCCM
4 / CF4 / 200 SCCM
5 / O2 / 100 SCCM
6 / N2 / 100 SCCM
7 / He / 400 SCCM
8 / Ar / 200 SCCM
Gas chamber 2:
MFC / Gases / Size
1 / SF6 / 300 SCCM
2 / C4F8 / 300 SCCM
3 / CHF3 / 200 SCCM
4 / CF4 / 200 SCCM
5 / O2 / 100 SCCM
6 / N2 / 100 SCCM
7 / He / 400 SCCM
8 / Ar / 200 SCCM.
LAM RESEARCH TCP 9400 DSIE is a highly advanced etcher/asher equipment designed for the semiconductor industry. This tool is specifically engineered for the precise etching and cleaning processes required in the fabrication of semiconductor devices. TCP 9400 DSIE incorporates cutting-edge technology to deliver superior process control, high productivity, and exceptional performance in a cleanroom environment. One of the key features of LAM RESEARCH TCP 9400 DSIE is its dual-source inductively coupled plasma (ICP) etch capability. This technology allows for high-density plasma generation, enabling precise and uniform etching of various materials used in semiconductor manufacturing. The dual-source design provides flexibility in etching different materials and structures, making it suitable for a wide range of applications. The system is equipped with advanced process monitoring and control capabilities to ensure consistent and repeatable etch results. Real-time endpoint detection, chamber temperature control, gas flow control, and pressure regulation are some of the features that contribute to the unit's high process control accuracy. These capabilities allow for optimization of etch parameters and minimization of process variability, leading to improved device performance and yield. TCP 9400 DSIE also offers a range of reactive gas chemistry options to support a variety of etching processes. The machine can accommodate multiple process gases, such as fluorine-based chemistries, oxygen, chlorine, and other specialty gases, to meet the specific requirements of different semiconductor device structures. The gas delivery tool is designed for precise mixing and flow rate control, ensuring efficient utilization of process gases and consistent process performance. In addition to its etching capabilities, LAM RESEARCH TCP 9400 DSIE is equipped with advanced ashing functionality for residue removal and cleaning of wafer surfaces. The asset uses a combination of plasma ashing and reactive gas chemistry to effectively remove organic and inorganic contaminants from wafer surfaces. This cleaning process is essential for maintaining wafer quality and ensuring the reliability of semiconductor devices. The model is designed with productivity and uptime in mind, featuring a high-throughput wafer handling equipment and automated process control functions. The wafer handling system can accommodate a range of wafer sizes and types, allowing for efficient processing of multiple wafers in a single batch. Automated recipe management, unit diagnostics, and maintenance features further enhance machine uptime and operational efficiency. Overall, TCP 9400 DSIE is a state-of-the-art etcher/asher tool that offers unparalleled performance, process control, and reliability for semiconductor manufacturing. Its advanced technology, versatile capabilities, and user-friendly interface make it a valuable tool for semiconductor manufacturers looking to achieve high yields and quality in their device fabrication processes.
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