Used LAM RESEARCH TCP 9600 SE #9205199 for sale

LAM RESEARCH TCP 9600 SE is a state-of-the-art etcher and asher for semiconductor production applications. This product features an efficient, integrated design that sets it apart from other etching and ashing processes. LAM RESEARCH TCP 9600SE uses high-power, high-frequency RF plasma to rapidly etch and ash away unwanted material on the surface of semiconductor wafers. The device utilizes an advanced plasma source, precision electrode design, and multi-chamber operation to provide repeatable and reliable performance, even in challenging applications. TCP 9600 SE has a maximum ashing/etching rate of up to 60 wafers per hour. Thanks to its quick cycle time and high throughput, TCP 9600SE can produces the highest yields in semiconductor production. Its modular system configuration allows for the flexible integration of additional components and devices, allowing users to customize the device to meet their specific production needs. LAM RESEARCH TCP 9600 SE offers users a wide range of process parameters to obtain consistent results. This way, manufacturers can look forward to highly repeatable and reliable production of superb quality wafers. Users can configure the device to etch and ash at different depths and with different etching rates, allowing them to custom tailor their process to the specific wafer and layer. All of these capabilities are underpinned by a compact design that enables a high space-to-performance ratio. LAM RESEARCH TCP 9600SE is the perfect choice for most space-critical applications. It is also safe to operate, thanks to its low-pressure plasma source and built-in radiation protection feature. This reduces maintenance time and enhances safety for workers. TCP 9600 SE impresses with its advanced features, impressive etching and ashing performance, and fast cycling times to maximize yields. With its accurate, repeatable, and highly reliable results, LAM RESEARCH etcher and asher is a perfect choice for complex semiconductor production applications.