Used LFE APE-110 #293631690 for sale
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ID: 293631690
Wafer Size: 4"
Plasma cleaners, 4"
Intel 8052 microprocessor
Digital mass flow control
Pump 23cfm not included
Digital metering:
RF Power
Chamber pressure
Flow rate: 1/2 1500 SCCM
Frequency: 13.56 MHz
Process gas: 5 PSIG, 35 kPa
Compressed air: 65-85 PSIG, 450-858 kPa
Power supply: 115 VAC, 50/60 Hz, 15 A.
LFE APE-110 is a dynamic etcher/asher designed to etch/ashe a variety of substrates with a maximum processing temperature of 1100°C. It offers a user-friendly interface and is compatible with bulk material or wafers up to 6" in diameter. APE-110 features a 11 zone load-lock system that allows for quick and efficient loading and unloading of substrates for processing, as well as a chamber temperature monitoring system for precise temperature control. A high-precision quartz z-stage with a resolution of 0.5µm offers high resolution etching and ashing. Achievable process results include sub-micron silica etching and comparable oxide etching as well as high-quality silicon etching and ashing. LFE APE-110's proprietary 3D physical etch feature, enables the user to etch residue-free three dimensional features, such as trenches and patterns, on difficult-to-etch substrates. Additionally, APE-110 has dielectric and stainless steel chambers, which minimize impurity contamination that can otherwise occur during etching/ashing. LFE APE-110 is powered by a powerful programming interface, providing users with the ability to "dial in" their process parameters and create complex recipes to ensure repeatable and consistent results. APE-110 also has an integrated RF source, which provides an alternating source of power for more selective etch/ash operations. Overall, LFE APE-110 provides high-quality etching and ashing of various substrates, coupled with an intuitive user interface and powerful process control tools. This etcher/asher allows users to achieve sub-micron precision and reliably produce high-quality etching and ashing results quickly and accurately.
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