Used MATTSON Aspen II #293619039 for sale

MATTSON Aspen II is a focused beam, etched and ashed reactive ion etcher (RIE) equipment used in a variety of high precision IC manufacturing and advanced materials research applications. The system's flexibility, accuracy and repeatability make it an ideal choice for applications ranging from ultra-high resolution patterning of semiconductor devices to etching and ashing of deposited layers and structure styles. The etcher offers a wide range of advanced processing capabilities, including precision plasma profiling, cleaning operations, etch lithography, batch etching and high-rate etching. It utilizes either standard DC or filtered AC powered separately - from high frequency to 200 kHz (or low frequency to 50 kHz) substrate power supplies. It is equipped with one or two planar coils for uniform uniform beam across the wafer. The unit features high-end features, such as a built-in helium mass spectrometer to monitor the quality of the plasma. This ensures process repeatability, with a guaranteed process life of up to 3,000 hours. The machine's innovative chamber design also delivers improved substrate temperature uniformity for faster processing rates, with temperatures up to 1,000C. The integrated microprocessor-based tool control allows users to set and store processes, monitor chamber conditions and trouleshoot during process runs. Profiling options available on the asset include 1,2 and 3 MHz optical profilers with an adjustable spot size, a BME sensor, a real-time spectrometer and an optional RGA sensor. Aspen II's advanced technology allows up to 16 substrates to be loaded and processed in one run, with a maximum substrate size of 200 mm (8 inches). The substrate holders are designed to keep subtrates cool and stationary during etching. Advanced safety features include interlocks which detect a wafer disconnect and automatically shut down the model. Applications for MATTSON Aspen II include patterning of photomasks and substrates, removal of dielectric or conformal coatings, high rate bulk etching of ceramics, and etching of deeply recessed features, trenches, holes and pillars. The equipment is also an excellent choice for superconductive thin-film deposition, lithographic definition of nanostructures and pattern transfer, high-yield process yields, and high-precision etching of MEMS devices.