Used MATTSON Aspen II #293830478 for sale

MATTSON Aspen II
Manufacturer
MATTSON
Model
Aspen II
ID: 293830478
Wafer Size: 8"
Vintage: 1997
Inductively Coupled Plasma (ICP) system, 8" 1997 vintage.
MATTSON Aspen II ICP-LE is a high-performance plasma etcher/asher designed for advanced semiconductor manufacturing processes. This innovative tool combines Inductively Coupled Plasma (ICP) and Low Energy (LE) technologies to deliver precise and uniform etching and ashing capabilities for a wide range of applications. At the core of Aspen II ICP-LE equipment is the Inductively Coupled Plasma source, which generates a high-density, low-pressure plasma that is ideal for etching and ashing processes. This source is highly efficient at dissociating gas molecules into reactive species, allowing for fast and controlled removal of materials from the substrate surface. The ICP technology also enables a high degree of process control, with the ability to adjust parameters such as gas flow rates, power levels, and pressure to optimize etching and ashing performance. The Low Energy feature of MATTSON Aspen II ICP-LE system enhances process control by providing precise control over the energy of the ions bombarding the substrate surface. This capability is particularly beneficial for sensitive materials and intricate structures, as it minimizes damage and ensures the integrity of the substrate during the etching/ashing process. The low-energy ions also improve selectivity, allowing for the selective removal of specific materials while preserving underlying layers. Aspen II ICP-LE unit is equipped with advanced process monitoring and control capabilities to ensure consistent and repeatable results. Real-time process monitoring allows for in-situ observation of etching/ashing rates, selectivity, and endpoint detection, enabling operators to make real-time adjustments for optimal process performance. Additionally, the machine is equipped with advanced endpoint detection algorithms, which can accurately detect the completion of the etching/ashing process based on plasma emission spectra or other signals. In terms of substrate compatibility, MATTSON Aspen II ICP-LE tool supports a wide range of wafer sizes and materials commonly used in semiconductor manufacturing. From silicon wafers to compound semiconductors, the asset can accommodate diverse substrates without compromising performance or uniformity. The model's wafer handling equipment is designed for high throughput and reliability, ensuring efficient processing of substrates in a production environment. Aspen II ICP-LE is also known for its versatility, with the ability to perform a variety of etching and ashing processes, including but not limited to oxide etching, nitride etching, resist stripping, and surface cleaning. The system can be easily configured and optimized for specific process requirements, making it a versatile tool for research and development as well as high-volume production. Overall, MATTSON Aspen II ICP-LE is a state-of-the-art plasma etcher/asher unit that offers advanced process control, precise etching/ashing capabilities, and high reliability for semiconductor manufacturing applications. With its innovative ICP and Low Energy technologies, this machine provides semiconductor manufacturers with the tools they need to achieve high-quality results and meet the demanding requirements of modern semiconductor devices.
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