Used MATTSON Aspen II #9407761 for sale

MATTSON Aspen II is a medium to high-powered plasma etch reactor. It is capable of etching wafers of all types, including gallium arsenide, silicon, gallium nitride, and indium phosphide. Aspen II offers a large, highly precise process envelope, allowing for precise etching of planar, flat and 3-D geometries. MATTSON Aspen II is equipped with an inductively coupled plasma source to generate plasma, as well as a downstream surface-mount shield to help contain the plasma and reduce contamination. The source is capable of generating both oxygen and CF4 based plasma, with a peak power of up to 1400 watts. The source utilizes a computer control system to ensure consistent power delivery and repeatability of process parameters. Aspen II offers a high degree of flexibility in etching process geometries. The chamber can accommodate wafers up to a diameter of 12" with a depth of 3" or less. It is capable of etching tapered and relief features, as well as more complex structures. Additionally, MATTSON Aspen II is compatible with various downstream process chambers, including electroplating, photolithography and deposition. Additional features of Aspen II include its ability to etch fine patterns with a minimum resolution of 0.1um, as well as its high uniformity of etch speed over the wafer surface. MATTSON Aspen II also offers high throughput, with processing times of 5 minutes per wafer or less. Aspen II is an ideal etching research tool, due to its large process envelope and high throughput. Its high degree of flexibility and precision make it suitable for advanced etching of different substrate materials.