Used MATTSON Paradigm SI #9231983 for sale

MATTSON Paradigm SI is an anisotropic etcher / asher for semiconductor processing applications. It utilizes a multi-stage, cyclic process to enable very precise control over the etching / ashing process. The process begins with a dry etching step. The chamber is filled with a gas plasma, generated by the RF field, coming from a 13.56 MHz power supply. This process strips away contaminants at the wafer surface and converts them to a gaseous form. The etching is followed by a wet process. A solution of potassium hydroxide (KOH) and deionized water is introduced into the chamber and is used to react with the contaminants. This reaction and the subsequent evaporation of KOH helps to further strip away material while at the same time ensuring a smooth surface finish. The ashing phase utilizes a combination of oxygen (O2) plasma and a stream of hot nitrogen (N2) gas. This helps to break down the organic material on the wafer surface and reduce the amount of carbon build-up. The final phase of the process helps to improve the surface roughness and removes any residual material from the Etch/Ashing process. A timed process of Ar and O2 plasma is used to sputter the wafer surface, further improve the surface texture and minimize problems with lifetime degradation of circuitry. Paradigm SI enables very precise control over the Etch/Ashing process. This precision helps ensure optimal product quality and reduced cycle time. The multiple-stage process ensures high uniformity across substrates and a very clean surface finish. This makes MATTSON Paradigm SI an ideal choice for dielectric, barrier, and metallization layers.