Used PLASMA ETCH PE-25 #9357195 for sale

PLASMA ETCH PE-25 is an etching and ashing equipment designed to etch and ash wafers of various sizes with high selectivity and excellent uniformity. It is a reactive ion etching (RIE) system that uses radio-frequency (RF) plasma source technology to etch and ash wafers with high selectivity and uniformity. The etching process is carried out in a vacuum environment (vacuum <10-7 Torr) in order to reduce the damaging effects of electron bombardment on the wafer surface. The unit is equipped with a 5 kVA high voltage power supply, a 15" capacitively coupled platen, RF power, a gas cabinet, cryopump and a vacuum chamber. The plasma etching machine is suited for etching a variety of materials including silicon, gallium arsenide, polycrystalline silicone and polyimides. With its advanced tool architecture, the asset is controlled by software commands that makes it user-friendly and easy to operate. A motorized translation arm provides precision in fine alignment of the wafer in the platen, and allows for repeatable edge etching. PE-25 etching model features excellent process selectivity and uniformity with high critical dimensions (CD) repeatability and low CD edge variation. The high uniformity of the etched patterns is enabled by the use of a plasma-activated source and a proprietary bias control technique. The ability to precisely control the process conditions, including pressure, temperature, RF power and source time, allow for high quality reproducibility over a wide range of materials. PLASMA ETCH PE-25 etching and ashing equipment provides an extremely clean, effective and efficient way to perform wafer etching and ashing. With its advanced RIE technology, it is possible to achieve an advanced level of selectivity while maintaining uniformity and repeatability. The cleanliness of the plasma etching process also allows for the monitoring of etch results in real-time while also eliminating the need for post-etch cleaning.