Used PVA TEPLA 300 #293619367 for sale

Manufacturer
PVA TEPLA
Model
300
ID: 293619367
Wafer Size: 8"
Plasma asher, 8" Quartz plasma chamber, φ9.6", 15" (depth) Microwave frequency: 2.45 GHz 2-Gas channels with Mass Flow Controllers (MFC) Optical endpoint detection Quartz barrel with RF cage Running hours: 2064 Power supply: 230 V, 13 A, 50/60 Hz.
PVA TEPLA 300 is an etcher/asher, a physical vapor deposition (PVD) system used for thin-film applications. It is widely used for thin-film deposition of refractory materials such as Ti, Cr, Al and other metals such as Cu, Mo, Pd, W and Re compounds. 300 retains a wide range of capabilities: it is capable of working on substrates with a size up to 12 inch (PVA TEPLA 300 mm) in diameter, maintaining accurate heating in a range from RT to 750 °C (RT = room temperature) with a uniformity of ± 2 °C. It also offers a high deposition rate and excellent repeatability making it suitable for a variety of applications including integrated circuit (IC) manufacture, thin-film sputtering, wafer-level packaging and micro-electromechanical systems (MEMS). 300 has a process chamber with a large area for thin-film deposition. The chamber has symmetric gas PTFE diffusion windows and two independent sputter guns and will support up to three susceptors or two wafers up to 12 inches in diameter. A vacuum system provides the process chamber with a base pressure of 0.005 mbar and can reach a max pressure of 10 mbar. PVA TEPLA 300 is equipped with an integrated digital controller with seven segment display and a resistive touch pad keypad. The user interface is intuitive and easy to use, and allows simplified programming of the deposition parameters, such as the substrate shape, sputter gun side, deposition time, glow emission time and power. 300 provides excellent uniformity, repeatability and accuracy in thin-film deposition processes. It is also backed by a service and spare parts team, who are available to provide technical support and advice on a wide range of applications.
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