Used PVA TEPLA / TECHNICS Plasma Excitor 3000-1 #62131 for sale

PVA TEPLA / TECHNICS Plasma Excitor 3000-1 is a high performance etcher and nanomaterials asher intended for use in the fabrication of semiconductor devices. It features a state-of-the-art dielectric barrier discharge (DBD) source, providing a clean, efficient, and low-cost etching process. TECHNICS Plasma Excitor 3000-1 uses a parallel plate plasma source, producing high power, uniform etching over large substrate areas, as well as clean and precise etching of small structures. It is also equipped with an advanced remote control equipment allowing for sophisticated patterning of etching and deposition processes. The plasma source of PVA TEPLA Plasma Excitor 3000-1 offers an accurate and efficient way to etch and deposit nanoscale materials. The remote control system includes a camera that allows real-time monitoring of the etching process, allowing users to fine-tune the etching parameters for specific applications. It is ideal for producing intricate photomasks, microfluidic devices and other delicate semiconductor products. Plasma Excitor 3000-1 can achieve etch rates of up to 200 nm/min and is capable of etching a wide variety of materials, including silicon, compound semiconductors, and metals. In addition to its etching capabilities, PVA TEPLA / TECHNICS Plasma Excitor 3000-1 also features an advanced ashing unit, allowing users to quickly and accurately deposit nanomaterials onto their substrates. The ashing machine works by driving off an inert gas packet, such as argon, to produce a precise and uniform ashing process. This process is extremely precise and efficient, making it ideal for depositing nanomaterials onto substrates quickly and reliably. In conclusion, TECHNICS Plasma Excitor 3000-1 is an advanced etcher and nanomaterials asher, featuring a state-of-the-art DBD source and an advanced remote control tool allowing for sophisticated patterning of etching and deposition processes. It is capable of etching a wide variety of materials, including silicon, compound semiconductors, and metals, and is able to achieve etch rates of up to 200 nm/min. It is also equipped with an advanced ashing asset for quick and precise deposition of nanomaterials onto substrates.