Used SAMCO RIE-200IPC #9181349 for sale

SAMCO RIE-200IPC is an etcher / asher, designed for isolated etching and ash back-in of various complex microelectronics structures. Etching is a process used to remove layers of materials in a structure, while ash back-in is used to restore integrity of the resultant structures after etching. This etcher/asher consists of two plasma processing chambers, allowing the etching and ash back-in to be carried out in the same machine. The two chambers are separated by stainless steel and ceramic insulators, to ensure that each chamber operates at a different pressure, temperature and radio frequency. The etching chamber is built with an inductively-coupled plasma source and a densified inductive ceramic for uniform etching. The uniform etching is unachievable with a capacitive plasma source due to the large number of electrodes. The ash chamber is equipped with an RF-driven, high frequency RF generator, which helps to reduce the amount of plasma power required for fast and even etching or ash back-in. The RF power helps to stop ions and electrons to detach from the surface of the layer being etched or ashed, giving an acceptable uniformity of the etching. RIE-200IPC includes features such as a simplified automatic process control system, a data logging system, a high-frequency delivery transformer for efficient ionization, high-vacuum capabilities, fast oxidation-free processing, low-energy plasma source for homogeneous and selective etching, as well as hydrogen boron ion implantation for doping. This etcher / asher has an automated product transfer system, allowing it to run unattended for long periods of time. In addition, SAMCO RIE-200IPC is a highly reliable machine and includes a wide variety of tools on the chamber walls, such as cleaning material, toroid holders, transfer stages, sample holders, isolators, wafers, wires, grounded shutters, nozzles, diagnostics ports, pressure chambers and power regulators, as well as other components. Finally, RIE-200IPC is able to process semiconductor wafers with diameter up to 200mm and the etch rate and ash back-in rate can be adjusted down to 0.01 micron. This makes it suitable for processing in demanding applications, such as realistic micro-structures for MEMS, IC, and MCMs.