Used SEZ / LAM RESEARCH SP 201 #9174299 for sale
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ID: 9174299
Wafer Size: 8"
Vintage: 1996
Etcher, 8"
Cassette to ECO handling
Vacuum transfer arm, ECO (Edge contact only)
Arm for front side/back side handling
Process chuck: Standard 8" pin chuck for SP201
(3) Chemistry dispense systems (CDS)
Currently warehoused
1996 vintage.
SEZ / LAM RESEARCH SP 201 is a plasma etcher / asher equipment designed for producing high-quality thin film processes. The system is capable of processing a wide range of substrates, including aluminum, copper, polysilicon, nickel, and other materials typically used for advanced microelectronic device fabrication. SEZ SP 201 utilizes standard etch chemistry techniques, such as reactive ion etching (RIE), chemical vapor deposition (CVD), and ion implantation technologies. The unit also features an advanced optical-based wafer alignment machine which ensures precise controlling of process geometries and profiles. LAM RESEARCH SP201 can be configured with multiple wafer chambers and chambers for different processes, thus allowing for multitasking in a production environment. This feature allows the tool to accomplish more complex tasks without increasing asset hardware requirements. The chamber pressure in SP 201 is maintained using a series of valves and vacuum pumps. Vacuum pressure is monitored by a precision gauge, and the model is capable of creating a vacuum pressure on the order of 10-5 Torr on the wafer. SP201 utilizes gas mixtures containing an inert gas, such as Argon or Nitrogen, combined with a reactive gas such as Oxygen or Fluorine. By establishing the right mass flow rate of gases, a desired etch depth can be achieved. The gases are monitored in real-time via mass-flow controllers, which ensure the correct rates for the etch process. The wafers are held under high negative bias when etching. The wafers are placed on an ElectroStatic Chuck and secured so that no vibration is created during the etch process. Finally, LAM RESEARCH SP 201 contains a high-power RF generator that creates a high level of radio-frequency energy. This electrical energy is used to generate the plasma required for the etching reaction. By controlling the power levels and pulse widths of the generator, precise control of the etch process can be maintained. In conclusion, SEZ / LAM RESEARCH SP201 is an advanced etcher / asher equipment designed to produce high-quality thin film processes. The system is well-suited for production environments and offers control in etch depth, precision wafer alignment, and chamber pressure. The unit uses inert and reactive gases, an ElectroStatic Chuck, and high-power RF generators for effective etching.
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