Used STS Multiplex ICP HRM #293811825 for sale
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ID: 293811825
Wafer Size: 8"
Etcher, 8"
Gases: SF6, C4F8, Ar, O2, C2
Process pressure: 5-80 mTORR
Masks: SiO2, SixNy
Coil: 3000 W 13.56 MHz
HF: 500 W, 13.56 MHz
LF: 500 W, 380 KHz.
STS Multiplex ICP HRM (inductively coupled plasma high-density reactive ion etcher) is a sophisticated etcher/asher tool specifically designed for advanced semiconductor manufacturing processes. This cutting-edge equipment incorporates high-density plasma sources and reactive chemistry to precisely etch or clean semiconductor materials with high selectivity, uniformity, and efficiency. Multiplex ICP HRM offers a wide range of capabilities tailored to the evolving needs of the semiconductor industry, enabling researchers and engineers to achieve precise material removal and surface modification for the development of next-generation electronic devices. The heart of STS Multiplex ICP HRM equipment lies in its inductively coupled plasma (ICP) source, which generates a high-density plasma environment for highly directional and controlled etching processes. This plasma source consists of a radiofrequency (RF) coil that generates a magnetic field to induce ionization of the process gases, creating a plasma with elevated ion densities and energy levels. The high-density plasma enhances the etching rate and selectivity of the process, resulting in superior process control and fine feature resolution. Moreover, Multiplex ICP HRM features a high-resolution mask alignment system, which enables precise alignment of the substrate with the patterned mask during etching processes. This alignment unit ensures accurate pattern transfer onto the substrate, facilitating the fabrication of intricate device structures with sub-micron precision. Additionally, the tool's advanced gas delivery machine allows for precise control of the process gases and flow rates, enabling the optimization of etching chemistry for specific materials and applications. One of the key advantages of STS Multiplex ICP HRM is its high selectivity, which refers to the ability of the etching process to selectively remove the target material while preserving the underlying layers or structures. This high selectivity is critical for the fabrication of complex semiconductor devices with multiple layers and delicate device architectures. The tool's advanced endpoint detection tool further enhances selectivity by accurately detecting the completion of the etching process, preventing over-etching and ensuring uniform etch depths across the substrate. In addition to its etching capabilities, Multiplex ICP HRM can also function as an asher for cleaning and surface modification applications in semiconductor processing. The tool's reactive ion etching (RIE) mode enables precise removal of surface contaminants, photoresist residues, and polymer films from semiconductor substrates, ensuring clean and pristine surfaces for subsequent processing steps. The asher functionality of the tool is particularly valuable for device manufacturing processes that require high levels of cleanliness and surface quality. Overall, STS Multiplex ICP HRM represents a state-of-the-art solution for advanced semiconductor etching and cleaning applications, offering unparalleled performance, precision, and process control. With its high-density plasma source, mask alignment asset, advanced gas delivery capabilities, and selective etching capabilities, this tool is ideally suited for the development of cutting-edge semiconductor devices with nanoscale features and complex architectures. Researchers and engineers in the semiconductor industry can leverage the capabilities of Multiplex ICP HRM to push the boundaries of device miniaturization, performance, and functionality, driving innovation in the field of semiconductor technology.
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