Used STS / SPTS ICP DRIE #9248907 for sale
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ID: 9248907
Wafer Size: 4"
Advanced Oxide Etcher (AOE), 4"
Module 1: Single slice loadlock
Module 2: AOE Chamber and rack
Module 3: Pneumatic and vacuum system.
STS / SPTS ICP DRIE (Inductively Coupled Plasma Deep Reactive Ion Etching) is a type of advanced power etching system which has become widely adopted in the semiconductor industry. This system has been developed as an alternative to conventional etchers as it has been shown to provide a much higher degree of accuracy, versatility and versatility at a lower cost. STS ICP DRIE is comprised of a variety of components, including an ICP source, a vacuum chamber, a wafer chuck, a wafer mask, a computer-controlled RF generator, a high-precision XY motion table, and an advanced gas delivery system. The etching process of SPTS ICP DRIE is initiated by the creation of a plasma within an enclosed chamber. The energy produced by the plasma is used to etch away the materials in the chamber, which are typically silicon and other semiconductor materials. The choice of the etching parameters (e.g., substrate temperature, RF power, and etch rate) is handled by the RF generator, which provides precise control of the etching kinetic. Then, a silicon-containing etching layer is deposited on the wafer for protection against the plasma environment. Lastly, the wafer mask is used to direct the localized etching of specific areas. In operation, ICP DRIE equipment is typically located in a cleanroom environment. The process begins with the loading of the wafer into the vacuum chamber of the etcher. The wafer is then placed into the wafer chuck and clamped into place. The etch process is initiated by the application of the RF power, which creates a plasma within the enclosed chamber and causes etching of the wafer surface. The entire process is constantly monitored by the computer, which is responsible for controlling the set of parameters driving the process. The precise control of the etching allows to achieve an extremely precise replication of the pattern desired with extremely precise control of the etching process parameters. At the end of the etching process, the wafer is unloaded from the chamber, inspected and measured for various parameters, such as dimensions, thickness and surface quality. In short, STS / SPTS ICP DRIE represents an advanced power etching technology that offers greater control and precision than older etching systems. It is suitable for etching a variety of materials including semiconductor materials such as silicon, and is well-suited for use in the production of integrated circuits and other semiconductor devices.
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