Used STS / SPTS Multiplex ICP #293828506 for sale
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ID: 293828506
Etcher
Process: Bosch
Type: Clamp type
ICP Source power
Platen power source (Bias)
Gases:
Gas / Size
SF6 / 260 SCCM
C4F8 / 170 SCCM
AR / 72.5 SCCM
O2 / 100 SCCM
Frequency: 13.56 MHz
Power supply: 600 W and 3000 W.
STS / SPTS Multiplex ICP is a cutting-edge etcher/asher utilized in semiconductor fabrication processes to etch or remove specific materials from the surface of silicon wafers or other substrates. This equipment employs Inductively Coupled Plasma (ICP) technology to efficiently produce high-density plasma, enabling precise and uniform etching of thin films with minimal damage to the underlying layers. STS Multiplex ICP platform is renowned for its exceptional process control, high throughput, and flexibility, making it a preferred choice for advanced semiconductor manufacturing. The concept of ICP etching involves generating a low-pressure plasma composed of reactive ions and radicals by applying a high-frequency electrical field to a gas mixture within a vacuum chamber. The ICP source is typically a helical coil or planar design surrounding the reactor chamber, inducing a strong electromagnetic field that ionizes the gas molecules and creates a high-density plasma. The plasma's energy can be controlled by adjusting the radiofrequency power, gas flow rates, and chamber pressure, allowing precise tuning of the etching or ashing process parameters. One of the key features of SPTS Multiplex ICP system is its multiplexing capability, which enables the simultaneous processing of multiple wafers in a single chamber. This parallel processing configuration significantly increases the unit's throughput and productivity, making it ideal for high-volume semiconductor production environments. Moreover, the multiplexing design ensures uniform etching across all wafers, leading to consistent device performance and improved process repeatability. Multiplex ICP platform also incorporates advanced endpoint detection systems to accurately monitor the etching process and automatically stop the operation once the desired etch depth is achieved. Endpoint detection techniques may include optical emission spectroscopy, laser interferometry, or mass spectrometry, providing real-time feedback on the etch rate and uniformity. This capability is critical for achieving precise control over the etching process and ensuring the reproducibility of device structures. In addition to etching, STS / SPTS Multiplex ICP machine can also function as an asher for removing organic residues or photoresist layers from the wafer surface. The ICP technology delivers high-energy ions and radicals that efficiently break down and volatilize the organic contaminants, leaving a clean substrate ready for further processing steps. The tool's ashing capability is essential for maintaining a contamination-free wafer surface and ensuring the reliability of semiconductor devices. STS Multiplex ICP platform offers a wide range of process recipes and gas chemistries to accommodate various material compositions and device structures. Users can optimize the etching parameters, such as gas flow rates, pressure, temperature, and bias power, to achieve the desired etch profile and selectivity. The asset's software interface provides a user-friendly environment for programming and monitoring the process steps, facilitating quick setup and efficient operation. Overall, SPTS Multiplex ICP model represents a cutting-edge solution for semiconductor manufacturers seeking advanced etching and asher capabilities in a high-throughput, multiplexed configuration. With its superior process control, endpoint detection features, and flexibility in handling diverse substrates, this platform enables the production of high-quality semiconductor devices with minimal defects and enhanced performance characteristics.
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