Used TEL / TOKYO ELECTRON Formula-1S-H #293654963 for sale
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ID: 293654963
Vintage: 2005
Diffusion furnace
Control system
Heater temperature: 600°C-900°C
Load port
FIMS
Wafer transfer
Boat elevator / Seal cap rotation
Auto shutter
Heater model
N2 Load lock
Boat operation
Process: LPCVD
Si SEMI STD-Notch, 12"
Furnace temperature controller: M780
HTR
Power box
Carrier transfer
Mechanical driver
Exhaust box
Front and rear upper cover
Final valve box
Gas flow chart
O2 Analyzer
Hard Disk Drive (HDD)
Does not include HCT
User interface:
MMI and gas flowchart: Gas box and front operation panel installed
Pressure display Unit: Mpa / Torr
Carrier type: FOUP / 25slots SEMI STD
Fork meterial: Al203 and PEEK
W/T Type: 1+4 Edge grip
16-Carrier stage capacity
Wafer notch aligner
RCU
UPS
Power distribution system:
3-Phase connection type: Star connection
Single-Phase connection: Grounded
Single-Phase voltage
Gas distribution system:
FUJIKIN Integrated Gas System (IGS)
IGS Final filter, regulator: MFC Z500 Type
MKS Capacitance manometer vacuum gage - press monitor (133 Kpa)
Power supply: 400 VAC, 3 Phase, 50/60 Hz
2005 vintage.
TEL / TOKYO ELECTRON Formula-1S-H is an etcher/asher designed for applications where a quick, precise and fine etching process is required. The equipment uses a combination of a plasma source, etching gas, controlled power and high frequency (RF) electric power to create a perfect etch profile. The etching process starts by ensuring a clean and exactly planar substrate. This is done to ensure that the etching process yields uniform etching results in the substrate. Next, the etching gas is injected into the system chamber, which is separated from the substrate by an independent RF antenna section. The unit then applies RF energy to the chamber, creating a plasma consisting of charged particles and reactive species that interact with the substrate. The rate of etching is then controlled by a combination of parameters such as the etching area, the flow rate of the etching gas and the power intensity. TEL Formula-1S-H is equipped with a precision etch chamber that is suitable for etching high aspect ratio (HAR) structures while also guaranteeing a low vertical erosion profile. This makes it possible to define even the most complicated three-dimensional structures with a high level of accuracy. In addition, the machine has a variety of user-friendly features, such as automatic wafer recognition, an on-board chemical management tool, condensed chemistry maintenance and an assisted procedure guide. TOKYO ELECTRON Formula-1S-H has a high throughput rate, allowing it to produce high-quality etch results in a relatively short process time. The asset is also designed to be reliable since it has been designed to withstand high-power RF fields and extreme temperatures. All of these features make it an ideal choice for etching applications that require quick and precision etchings.
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