Used TEL / TOKYO ELECTRON Tactras Vigus #293818565 for sale
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TEL / TOKYO ELECTRON Tactras Vigus is an etcher or "ashers" used for a range of processes including deposition, sputter-coat, CVD, lift-off, planarizing, and via patterning. This tool uses an ion-implanted technique to deposit up to 55 nm thick layers of material with a high degree of precision. It offers uniformity of etch topography on the substrate and can also be used to perform chemical vapor deposition (CVD). The etching process is performed by ion implantation and sputter coat, while the CVD process is done by introducing a gas phase ingredient onto the substrate. TEL Tactras Vigus etcher is equipped with an array of advanced components, including a cathode, a substrate holder, an RF microwave, a substrate-cooling system, and a gas-injection mechanism. The cathode creates an electric discharge that is used to etch silicon, while the substrate holder can hold substrates up to 8 inches in diameter. The high-power RF microwave, which has a frequency range from 1.8 to 38.5 GHz, is used to create a high-temperature and strong-voltage plasma for the etching process. The substrate-cooling system keeps the substrates' temperatures in the range of 5-40 degrees Celsius, thereby making sure that the deposition and etching processes are carried out safely. Lastly, the gas-injection mechanism is used to control the etching speed, pressure, and chemical composition, as well as the gas flow rate. One of the main advantages of TOKYO ELECTRON Tactras Vigus etcher is its ability to accurately etch down to 55nm, even on porous surfaces such as graphite and spinodal alloys. Additionally, the tool can easily be integrated into existing equipment and can be operated under either clean room or open air conditions. Furthermore, with its high-speed rotation and high-speed, low-pressure etching equipment, the etching process can be completed quickly and accurately. As a result, Tactras Vigus etcher is suitable for a wide range of applications, including production, research, and development.
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