Used TEL / TOKYO ELECTRON TE 8401 #293637515 for sale

TEL / TOKYO ELECTRON TE 8401 is an etcher or asher designed for microelectronics fabrication. This equipment utilizes 49 parallel plasma source pulse bias to perform precise etching of advanced microelectronic structures. It offers down to 100nm etch precision and throughput of up to 800 wafers per hour. TEL TE 8401 features a horizontally aligned, in-line design, which allows efficient part movement and replacement of different processing modules depending on process needs. It has a small footprint but its advanced Pulsed Plasma Etch technology has excellent uniformity and accuracy, offering precise control over etch rates, profiles and critical dimension measurements. The system is optimized for the etching of ultra-thin materials like Aluminium, Copper, and Low-K dielectric materials with high selectivity and low profile. TOKYO ELECTRON TE-8401's optimized uniformity enables better integration of thin dielectric layer in devices, with greater lithography and etch process compatibility. Other key features of TE-8401 include a high aspect ratio for increased feature density, a tight process window for improved process control and a high degree of material consumption efficiency. It also supports high-level process automation with its remote portal and process monitoring capability. TEL TE-8401 unit also supports advanced Pulsed Etch Process (PEP) technology, which is capable of handling 3D wire leveling, more complex designs, and thinner dielectric layers while maintaining excellent profile and etch rate control. In addition, its automated recipe control with its layer-by-layer precision and accuracy helps reduce manufacturing time and cost. Overall, TOKYO ELECTRON TE 8401 etcher or asher is an advanced machine designed for ultra-precise etching of advanced microelectronic structures for medium to large-scale production. Its high processing speed, Pulsed Plasma Etch technology, and process automation make it an ideal solution for the fabrication of ever-more complex semiconductor devices.