Used TEL / TOKYO ELECTRON Telformula ALD High-K #9282608 for sale
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ID: 9282608
Wafer Size: 12"
Vintage: 2015
Vertical LPCVD Furnace, 12"
VCM-5D-012L Heater
Maximum operating temperature: 300°C
ART Control
N2 Load lock
Wafer type: Si SEMI STD-Notch
(50) Production wafers
Dry pumps missing
Loading area light: White (LED)
RCU Duct length FNC to RCU: 20m
Chemical prefilter hydrocarb
Chemical prefilter location: FNC Top
Wafer / Carrier handler:
Carrier type: FOUP / 25-Slots SEMI STD
ENTEGRIS A300 FOUP
Carrier stage capacity: 10
Info pad A,B: Pin
Info pad C,D: Pin
Fork material: Al2O3
Furnace facilities:
Furnace exhaust connection point: Top connection
Cooling water connection point: Bottom connection
Air intake point: Top
Gas distribution system:
IGS Type: IGS 1.5" W-Seal rail-mount
FUJIKIN IGS System
Tubing bends: <90°C
PALL IGS Final filter
IGS Regulator: CKD
HORIBA STEC IGS MFC Digital
HORIBA SEC-G111 IGS MFC For low flow N2 purge
IGS Press transducer: Nagano
HORIBA STEC LSC-F530 Liquid source vapor system
For ZAC HORIBA STEC TL-2014
Auto refill system TMA: AIR LEQUIDE / CANDI
Auto refill system ZAC: AIR LEQUIDE / CANDI
OP-500H-RE1 Ozone delivery system
Injector O-Ring material: DU353
Gas facilities:
Incoming gas connection point: Bottom connection
Gas VENT Connection point: Bottom connection
Exhaust VENT Connection point: Bottom connection
Gas unit exhaust connection point: Bottom connection
Exhaust:
Vacuum gauge pressure controller: MKS Capacitance manometer (Hot)
Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot)
Vacuum gauge pump monitor: MKS Capacitance manometer (Hot)
CKD VEC-VH8-X0110 Main valve
VYX-0279-CONT Controller
EDWARDS iXH-1820T Pump
EDWARDS TPU Abatement system
Type: Burning type
Exhaust box: Wide type (1200 mm)
Exhaust O-Ring material: DU353
FNC Power box: 30m
FNC RCU: 30m
Power box RCU: 30m
Power box pump unit: 30m
Power box refill system: 30m
Host communications: Comply with GJG
Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX)
Ingenio
OHT Capability
Load port operation: Lower and upper
PIO I/F Location: FNC Top
PIO Provided by: TEL
HOKUYO DMS-HB1-Z PIO
Carrier ID Reader writer type: RF
CIDRW Lower L/P: Read
CIDRW Upper L/P: Read
CIDRW FIMS: Read/Write
CIDRW: HOKUYO DMS-HB1-Z Series
CIDRW Tag orientation: Vertical
Customized management signals: PT/Water
Interface:
Signal tower model: LCE Series
Signal tower colors: Red/Blue/Yellow/Green
Signal tower location: Front for 10 Stocker (Left)
Front operation panel
MMI and gas flowchart: Gas box and front operation panel Installed
Indicator type: HOKUYO DMS-HB1-Z Series
Operator switch: Operator access / White cover with orange light
Pressure display unit: MPa / Torr
Cabinet exhaust pressure display: Pa
Warning label: Chinese/English
Power:
Power cable input entrance loc: Power box top
Power supply:
3 Phase connection type: Star connection
200/400 VAC, 60 Hz, 3 Phase
2015 vintage.
TEL / TOKYO ELECTRON Telformula ALD High-K is an advanced etching and anisotropic etching equipment designed for high-precision deposition of high-k dielectric thin film layers. The system utilizes advanced Telformula ALD technology to provide superior line definition and excellent step coverage, resulting in improved device yield and performance. This unit enables users to deposit high-performance dielectric layers with SiO2, SiN, SiC, or any combination of them. It works in both manual and automated modes, allowing for a wide range of etching processes. The machine also utilizes a reactive ion etching (RIE) formation for high-precision etching of patterns and line structures. TEL Telformula ALD High-K is designed for batch processing, which provides high throughput etching for large volumes of parts and substrates. The tool is equipped with Advanced Process Control (APC) software, which is a powerful new tool for monitoring and controlling the etching process. This software provides real-time analysis of the etching process parameters and utilizes in-situ feed back control to minimize variations. The asset features a wide range of process parameters, including etching temperature range from 0°C to 350°C, substrate temperatures up to 500°C, etching pressure up to 6Torr, etching time up to 5 minutes, and multiple feed gas valve options. The model also offers an optional pressure. Intermediate Flow (PIF) equipment, which provides accurate control of etching pressure and gas flows during the etching process. TOKYO ELECTRON Telformula ALD High-K is designed for compatibility with a variety of resist materials and allows precise control of etching parameters for repeatable high-performance etching results. Its optimized process platform gives improved productivity, with greater etch rates and superior device yield than other etching systems. This etcher is also capable of producing high resolution features down to 0.3µm line widths with exceptional uniformity and repeatability, making it ideal for the development of semiconductor devices with precise line definition and feature uniformity.
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