Used TEL / TOKYO ELECTRON Telius 305 DRM #293802362 for sale

TEL / TOKYO ELECTRON Telius 305 DRM is an advanced etching or ashing equipment, designed for high-planarization etching and ashing of wide variety of substrates. This system provides precise surface modification of integrated circuit substrates and other materials requiring enhanced planarization. The Telius 313 is specifically optimized for 2 & 3-D resist structures and high aspect-ratio etching/ashing processes. The capability to perform etching and ashing at extremely low temperatures make TEL Telius 305 DRM ideal for the use of advanced low-k dielectrics and high-resistivity substrates. TOKYO ELECTRON Telius 305 DRM is comprised of a platform base with two vertical reactor chambers (or EDACs). Each EDAC is equipped with a series of multiple source RF/DC and remote plasma generators for vertical etching/ashing as well as an electron cyclotron resonance (ECR) source for horizontal etching/ashing applications. The unit is equipped with two gas distribution feed lines to each EDAC, allowing a wide range of gases to be used for various applications. Telius 305 DRM is capable of producing very high quality planarization surfaces with superior gap filling capability and minimal residue generation due to its accurate control-zone plasmas. The machine is also capable of producing very clean troughs with non-uniform gap-free profiles even over high aspect ratios. This makes TEL / TOKYO ELECTRON Telius 305 DRM especially good for etching and ashing of various materials including photoresist, silicon wafers, III-V semiconductors and polymers. TEL Telius 305 DRM has a low thermal budget, generating only minimal thermal stress on the material, so it is suitable for advanced low-k dielectric etching/ashing. This tool also has exceptionally high throughput due to its unique two-chamber architecture that allows simultaneous etching and ashing of multiple wafers. TOKYO ELECTRON Telius 305 DRM also provides very high process uniformity and repeatability, and its unprecedented gap filling feature enables even layers to be planarized over gap sizes as small as 0.2 microns. Telius 305 DRM is well suited for high-planarization etching and ashing of a wide range of substrates, and its especially advanced capabilities make it an ideal choice for advanced low-k dielectric ashing/etching. Its broad range of features, including precise temperature control, and high throughput and process uniformity make it an excellent device for etching and ashing of a variety of materials.