Used TEL / TOKYO ELECTRON Trias Ex-II #9351479 for sale

TEL / TOKYO ELECTRON Trias Ex-II is an etcher or asher specifically designed for use in electronic device fabrication. It is a type of chemical vapor deposition (CVD) equipment capable of depositing thick films of dielectric or metal materials onto substrates such as SiC, SiO2 and TaN. TEL Trias Ex-II offers fast, precise, and highly repeatable processes in a very compact design, making it suitable for the fabrication of smaller devices. The system employs a patented multi-gun technology with an adjustable Loadlock chamber that is capable of handling substrates up to 450 mm in size. It is well suited for a wide range of advanced research and product development applications in nanotechnology. TOKYO ELECTRON Trias Ex-II is an advanced unit that uses Plasma Enhanced CVD (PE-CVD) for depositing various thin films. It has an independent, tri-gun chamber design with a rod and upper showerhead. Each gun is controlled by each own driver and emitter. By combining PE-CVD with downstream etching, it allows for the deposition of a complete, dense film structure with a minimal number of processing steps. The machine is equipped with a number of automated functions that simplify the deposition process. Those include automatic calibration and selection of the appropriate process parameters, as well as an Auto Layer Thickness Optimizer (OTR) that automatically fosters optimal deposition performance. In addition, Trias Ex-II is capable of performing temperature treatment and of adding stress to the deposited film in order to simulate real-life conditions. The tool also includes a Platinum 5.5 EndPoint Monitor that provides real-time in-line wafer control, allowing for precise layer control and higher end process yields. It is designed with advanced interlocks to ensure a clean environment and has an exhaust and depowdering capability. Overall, TEL / TOKYO ELECTRON Trias Ex-II etcher / asher is a powerful and versatile etching asset well suited for the fabrication of advanced microelectronic devices. It provides a precise, highly repeatable process with quick throughput and excellent layer and endpoint control, allowing for the fabrication of devices with higher yields.