Used TEL / TOKYO ELECTRON Trias #9357266 for sale

TEL / TOKYO ELECTRON Trias
ID: 9357266
Wafer Size: 12"
Vintage: 2006
CVD System, 12" Process: BL GL Ti Dep BROOKS AUTOMATİON TLG-LON Load port, (3) FOUPs SHINKO SELOP12F25-30A-13 SHINKO SBX92101286-3 FI Robot FUJI M-UPS050J22L-UL UPS SANEI GIKEN TL7KCPVB-2P Chiller MPD Transformer box Mainframe: YASKAWA XU-RVM4100 Buffer robot V TEX I-I-98009-2-1 LLM1.2 Gate valve KITZ DOUBLE ACTION Chamber gate valve Process chambers: PM1, PM2, PM3, PM4 Single wafer chamber With stage heater RKC INSTRUMENT INC Module heater controller TEL TMC2001 Module heater controller Column trap KYOSAN HFK15Z-TW1 RF Generator KYOSAN EAKIT RF Matcher VERIFLO SQ-MICRO-602PUPGPA Regulator LEYBOLD TSR211S Pirani sensor INFICON VSA100A Pressure Sensor MKS 626A01TDE Capacitance manometer LEYBOLD CDG160A-S 1330PA Capacitance manometer (1333Pa) LEYBOLD CDG160A-S 133PA Capacitance manometer (133KPa) STEC VC131004ST20 Vaporizer (TiCL4) Gases: Gas / Make / Model / Valve MFC2 / ClF3 / SAM / SFC1470FA / 500 SCCM MFC5 / Ar / SAM / SFC1480FA / 5 SLM MFC6 / H2 / SAM / SFC1481FA / 300 SCCM MFC7 / NH3 / SAM / SFC1480FAPD / 0.6/2 SLM MFC8 / N2 / SAM / SFC1480A / 2 SLM MFM / TiCl4 / STEC / SEF-8240 / 20 SCCM 2006 vintage.
TEL / TOKYO ELECTRON Trias is an etcher/asher used in the microfabrication of semiconductor materials. The device utilizes a plasma-enhanced chemical vapor deposition (PECVD) process to deposit thin layers of material onto the substrate surface. The equipment works in a vacuum by using a gas source that is burned off in the plasma chamber to form a film of the desired material with controlled thickness. The etcher/asher also offers a high selectivity rate, which allows for precise etching of the deposition layers, enabling extremely precise fabrication of semiconductor material features. This is achieved by emitting a wide range of gases into the chamber from separate gas lines. TEL Trias' RF Generator produces a high-frequency signal to produce plasma from the gas, which is then directed onto the substrate surface. TOKYO ELECTRON Trias also offers an etching process, which utilizes a two-steps system. An etchant gas is passed through the chamber, along with a reactive gas that provides the necessary species to create the etch product. During this process, the chamber is operating under a reduced atmospheric pressure (less than 100 mtorr) and away from the chamber walls, which help to keep the plasma at an optimal temperature. Additionally, Trias etcher/asher is able to precisely control the etching process in order to achieve a high level of accuracy and uniformity. The equipment offers a variety of features, such as Program Success Report and Process Monitoring System, to ensure reproducible etching and deposition characteristics. This is of utmost importance, as it ensures that every device produces the highest levels of quality. Furthermore, the RF Generator is coupled with a 3D RF Generator, which provides effective compensation for non-uniform deposition, due to wafer loading, alignment, and wafer temperature conditions. This ensures uniform etch and deposition processes, which are essential in fabricating quality microelectronic devices. Overall, TEL / TOKYO ELECTRON Trias is extremely useful for a wide variety of etching and deposition applications. Its advanced features and easy operation allow for precise fabrication of semiconductor devices in a controlled environment. Thanks to its intuitive layout and capabilities, TEL Trias is an essential tool in today's modern microfabrication industry.
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