Used VEECO Ion Beam Etcher (IBE) #293775921 for sale
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ID: 293775921
LEYBOLD MAG W 1300 Pump
OERILIKON LEYBOLD D65BCS Gas
BROOKS MX400TM 4-Side transfer module
POLYSCIENCE DCW304D1M01 Chiller
MARATHON Express 400 Palette loader
MKS Baratron Manometer
Process module
Polished stainless steel chamber
Single wafer fixture with flow cool
Rotation: 3-10 RPM
Tilt: +90°-75°
Clamp
Shield
Liner
Motion box
I/O Net module
I/O Box
Loadlock
Palette elevator
Turbo pump
Gas line
(4) Pallets
(3) MFCs
(2) AC Power cabinets
RF-350 Source with PBN and shutter
Forline gauge: GP275 Mini conventron 275538-GD-T
Rough gauge: GP275 Mini conventron 275538-GD-T
GP354 Mini conventron 275538-GD-T
Loadlock chamber gauge: GP275 Mini conventron
Vacuum source and flow cool
MKS:
10 SCCM
(2) 50 SCCM
Power supply: 208 V, 3 Phase, 150 Amps.
VEECO Ion Beam Etcher (IBE) is a state-of-the-art tool used in semiconductor device manufacturing processes for precise material removal and surface modification. Utilizing ion beam technology, VEECO IBE offers a controlled and highly efficient method for etching and ashing various materials with exceptional precision and uniformity. At the core of VEECO IBE equipment is the ion beam source, which generates a focused and high-energy ion beam that bombards the substrate, breaking molecular bonds and removing material through physical sputtering. The ion beam can be produced from a variety of ion sources, such as noble gases like argon or reactive gases like CF4, depending on the specific material being processed and the desired etch characteristics. One of the key advantages of VEECO IBE system is its ability to achieve high etch rates while maintaining excellent selectivity and uniformity across the substrate surface. This is essential in semiconductor manufacturing processes where precise control over material removal is crucial for the fabrication of nanoscale devices. VEECO IBE unit offers a range of process parameters that can be optimized to tailor the etch process to the specific material and device requirements. Parameters such as ion beam energy, beam current, beam angle, and substrate temperature can be adjusted to achieve the desired etch rate, profile, and surface finish. In addition to material etching, VEECO IBE machine also supports ashing processes, which involve the removal of organic contaminants or photoresist layers from semiconductor wafers. By carefully controlling the ion beam parameters and process conditions, VEECO IBE can effectively ash the surface without damaging the underlying material, ensuring the integrity of the device structure. VEECO IBE tool is equipped with advanced control systems and monitoring tools to ensure precise process control and real-time feedback. Integrated plasma diagnostics, optical emission spectroscopy, and endpoint detection capabilities allow operators to monitor the etch process and make adjustments in real-time to optimize performance and yield. Moreover, VEECO IBE asset is designed for high-throughput production environments, with features such as automated wafer handling, recipe management, and data logging capabilities. This enables semiconductor manufacturers to achieve consistent and reproducible results across multiple wafers and process runs, improving overall productivity and yield. In conclusion, VEECO Ion Beam Etcher (IBE) is a versatile and highly advanced tool for material etching and ashing in semiconductor device manufacturing. With its precise control, high uniformity, and excellent process repeatability, VEECO IBE model is an essential tool for achieving the stringent process requirements of modern semiconductor fabrication processes.
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