Used YES / GLEN R3 #9251749 for sale

Manufacturer
YES / GLEN
Model
R3
ID: 9251749
Vintage: 1994
Plasma cleaner Low frequency Mass Flow Controller (MFC) N2 Flow rate: 1.7 SCFM Process gas flow rate: 20-50 SCCM Chamber material: 6061-T6 Aluminum RF Plasma power: 0 - 500 W at 550 VAC Nitrogen consumption: 0 SCFM idle, 1.7 SCF Reactant gas consumption: 0 SCFM Idle, 150 SCC KF 40 Vacuum plumbing Clean room capability: Class 10 Compliance: SEMI S2 Touch screen interface Analog MFC control and monitoring Thermocouple monitoring for etch uniformity Safety factors: Integral RF and pressure interlocks TCP/IP Port Self-diagnostic program Constant real-time display Audible and visual cycle complete indicators Audible and visual indication of incorrect process with diagnostics display Vacuum sensor: 0-1000 Torr With (2) trip points Load capacity: Up to 4 active plasma areas: 15.13" x 15.39" Operational modes: RIE Downstream electron-free Active ion trap Grounded ion trap Measurements: Interior chamber dimensions: 450 x 450 x 300 mm Chamber process area: 931 in² or 233 in² Power supply: 230 V, 20 Amps, 50/60 Hz, Single phase 1994 vintage.
YES / GLEN R3 is an etcher/asher created to improve the efficiency of the silicon via etch and aspect ratio measurement. It is designed with the capacity to process 15mm x 15mm, and up to 8-inch wafers. The equipment features a Precision Spinning Tab Die (PSTD) and an automated precision ejection system. This dual source process helps achieve increased process capability and variability. The enclosed 4" vacuum enclosure maintains process repeatability and is coupled with the traditional Multi-Boron Implant Plus (MBI+) unit to provide sample delivery and perform the etching. The PDT provides both single-sided flat-field and multi-point measurement capabilities through its automated scanhead. It employs a unique stainless-steel knife-edge access port and customized chuck jaws to provide very low distortion and accuracy. The PSTD is also optimized for isolation etching and aspect ratio measurements. It features a combined dual wafer temperature control machine, gas distribution, and a gas lift control. This is complemented with advanced process control and software for monitoring and manipulating the etch parameters, resulting in high process reproducibility, repeatable residues, and aspect ratio measurements. YES R 3 also features a combination of non-destructive and destructive arrayed etch measurement techniques. Dual-sided Flat-field Profiling (DSFP) and Multi-Point Profiling (MPP) capabilities are provided, complemented with a wide-range of variable etch rates and minimal wash times. DSFP and MPP measurements are extremely repeatable, providing fast and reliable process information to assist optimization and troubleshooting efforts. This etcher/asher is a robust and reliable tool, designed with improved process parameters for high process throughput and improved flux stability for increased productivity.
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