Used BOC EDWARDS Zenith III/V #151206 for sale
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ID: 151206
MOCVD AIXTRON scrubber
Electrical supply:
Voltage: 208V
Phases: 3
Frequency: 60Hz
Conductor size required: 6 mm^2
Maximum current consumption:
iH80 pump: 14.6A
QMB500F pump: 8.8A
TPU: 20A
Circuit breaker ratings (system control unit):
CB1: 6A
CB2: 6A
CB3: 10A
CB4: 6A
Fuse ratings (system control unit):
F1: 3.15A
F2:
F3:
F4: 3.15A (5V DC)
F5: 1A (12V DC)
F6: 3.5A (24V DC)
Conductor colors used:
> 100V: black
AC line neutral: white
24V AC: red
24V AC return: white
24V DC positive: violet
24V DC negative: brown
Signal return: pink
Earth (ground): green / yellow
Earth (ground) leakage circuit breaker: 30mA
Fuel gas flow:
Fuel gas:
Type: Methane
Calorific value: 36.9 to 42.3 MJ/min^3, 972 to 1114 BTU/s ft^3
Supply pressure: 1 to 10 psi, 0.07 to 0.7 bar
Flow rate: 37 L/min
Nitrogen:
Supply pressure: 4 to 6 bar gauge, 58 to 87 psig, 5x10^5 Pa to 7 x 10^5 Pa
Flow rate:
Into the TPU: 15 L/min
Into the pumping system: 50 L/min
Compressed dry air:
Supply pressure: 4 to 6 bar gauge, 58 to 87 psig, 5x10^5 Pa to 7 x 10^5 Pa
Flow rate (for each TPU inlet): 30 L/min.
BOC EDWARDS Zenith III/V is a versatile, open-architecture plasma etch equipment designed for a wide variety of high-precision applications such as microelectronic device fabrication, MEMS devices, semiconductor wafers, and various other thin-film materials. This etch system is highly configurable and can be tailored to a multitude of processes. The unit has a tight enclosure and is designed to maximize safety and efficiency during operations. It is equipped with three independently controlled process chambers; the principal chamber for plasma etching, an optional UVA/N2O chamber for ashing operations and a CVD chamber for sputter deposition. BOC EDWARDS Zenith III/V is composed of two main components: the process chamber cabinet and the control unit. The chamber cabinet has many features and components, such as the plasma etch chamber, dry etch chamber, remote plasma source, DC power supplies, substrate holders and gas delivery systems. The control unit interfaces with the process chamber cabinet and provides a wide array of functions, including process parameter control, data logging and analysis, as well as a user-friendly graphical interface. BOC EDWARDS Zenith III/V features a low-pressure plasma etching process that provides a high degree of control and reproducibility to the etching. The process is carried out in the etch chamber and is powered by a remote source. The etching process is controlled via the control unit and can be configured for a variety of parameters like pressure, time, temperature and display. The optional UVA/N2O chamber is designed for ashing operations and utilizes ultraviolet radiation to selectively remove organic compounds from the surface. This chamber is also powered by its own remote source, ensuring an isolated process from the etching chamber. The CVD chamber is used for sputter deposition, a technique that produces thin films of metal or other materials on a substrate. The chamber is equipped with several features, including temperature control, pressure control, and the ability to adjust ionization current. BOC EDWARDS Zenith III/V is an advanced and versatile plasma etch machine that is suitable for a wide variety of high-precision applications. It provides a high degree of process control, high quality results and is designed for improved safety and efficiency. It is well suited for a variety of thin-film applications in microelectronics, MEMS device fabrication, and semiconductor wafers.
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