Used NISSIN NH-20S #293752265 for sale

NISSIN NH-20S is a ion implanter and monitor equipment designed for implanting superior quality, high purity ions into integrated circuits and electronic device surfaces. It can be used for the production of both planar and 3D devices with the use of sputtering technology. NH-20S provides a wide range of options, such as variable beam voltage, beam current range, and substrate movement for outstanding process control. NISSIN NH-20S's beamline is optimized to provide the highest precision ion implantation performance, with features such as low beam aberrations and higher-order imaging to reduce substrate movement induced errors. The system can support both negative and positive ions in any desired mix and employs an auto-adjust operation to maintain accurate implant dosages and uniformity even if the substrate movements is affected by external factors. NH-20S automatically stores the implant profiles of the different layers and tracks the implantation progress over time. In addition, it includes a built-in interactive user interface, which makes the operation more user-friendly. The unit also features multiple monitor systems to ensure quality assurance when monitoring results, including ion counting and backscattering analysis. NISSIN NH-20S is compatible with a wide range of ion sources, including NISSIN E Turbo-Ion Implator and NISSIN AM Refining Ion Source, which can be used for doping and deposition applications. The machine also supports the conversion of the thermal energy induced in the implant process into electrical energy, ensuring fast and uniform implantation. NH-20S is well-suited to high-volume production due to its high-speed operation, but can also be used for custom designs in small or medium-scale production. The tool is highly reliable, with self-diagnosis features that monitor the asset's operational function and can automatically initiate maintenance when necessary. Furthermore, all components are designed to the highest quality for achieving the finest and most precise ion implantation specification.