Used NISSIN NH-20SR #9226070 for sale

NISSIN NH-20SR Ion Implanter & Monitor is a leading-edge piece of state-of-the-art technology for the implantation of ions into a substrate material. This versatile, compact and reliable machine provides precise ion beam imaging with accurate beam control and process parameters for implants. There are two 6-axis controllers and high-precision cathode motors that allow smooth, one-step ion implantation. NISSIN NH 20SR is a very durable and reliable ion implanter & monitor, designed to perform well under the most challenging conditions. It is composed of an adjustable chamber/gas cell, ion source, vacuum pumping equipment, beam shaping elements, and a control system. The chamber/cell is a hydride-resistant, stainless steel-lined vessel that is capable of operating up to a pressure of 6 x 10-4 Torr. The ion source is a linear type with 6 adjustable cathode-eye elements that allow for the optimization of the ion beam parameters. It also contains a vacuum pumping unit composed of a turbomolecular pump, a rotary pendulum, and a gate valve that is designed to maintain a stable vacuum level in the chamber. NH-20SR also includes a beam shaping section consisting of a grid lens that can be configured for either positive or negative polarity implantation as well as a focusing lens that can be adjusted to fine tune the ion beam angle. The control machine is a 3-step programmable and user-friendly interface which enables the user to adjust the ions implantation according to the desired parameters. Additionally, a real-time monitor is connected to the tool which allows for monitoring of the process parameters in real time. NH 20SR is an ideal solution for anyone requiring precision ion implantation. It is a highly reliable and adjustable asset that is sure to help increase the efficiency and quality of any ion implantation process. The combination of a durable and dependable design, with an intuitive control model, makes this ion implanter & monitor an invaluable tool for those working in the field of ion implantation.