Used SEN / SUMITOMO EATON NOVA NV-GSD-HE3 #9283246 for sale
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ID: 9283246
Wafer Size: 12"
High energy implanter, 12"
(4) FOUP
Energy range: 10 KeV to 3750 KeV with RTEM (Real Time Energy Monitoring Capability)
UPS: MUF3051-BL
Mass analysis magnet and power supply
Inject flag faraday
Power supply: 3 kW 13.56 MHz
High voltage beacon
Does not include Hard Disk Drive (HDD)
Liner accelerator:
(12) High energy resonator cavities
(14) Quadrupole
Quadrupole lens and power supply
Final energy magnet and power supply
Resolving faraday
Continuous variable aperature
End station wafer handling:
In-air / In-vacuum high throughput wafer handling system
Sub-class 1, ULPA filtered wafer handling area
Automatic notch alignment capability with buffer cassette
Integrated "dummy wafer fill-in capability
Slot to slot wafer integrity
End station disk:
Two axis variable implant angle
(13) Wafers process disk with direct, 12"
End station dose control:
Real time patented dose control
End station robot: SEN MACOROB 300
End station option:
Valved RGA Port on end station resolving
Valved RGA Port on disk module
Faraday burn through sense
Facilities utilities:
Feed from bottom
Feed gas box exhaust from top
Facilities cable:
Remote cryo pump compressor cable
Remote disk chiller cable
Facilities:
Main PD assembly
Signal tower light assy
(4) Light CE
Fire safety kit:
Smoke detector
VESDA
60 Hz Standard
Gas box exhaust needs to feed from top
High voltage warning display - English
Gas box:
Gas 1 type Gas box gas type position Ar with HP
Gas 2 type Gas box gas type position BF3 with SDS
Gas 3 type Gas box gas type position BF3 with SDS
Gas 4 type Gas box gas type position PH3 with SDS
Gas 5 type Gas box gas type position PH3 with SDS
MFC2 Unit 8160 10 ccm
MFC3 Unit 8162 5 ccm
MFC4 Unit 8162 10 ccm
MFC5 Unit 8162 10 ccm
Remote rack:
SEN chiller
Heater exchange from FAC
Service PC X-terminal
Door Bypass Switch:
Source head: ELS
3-AXIS Extraction electrode:
Vacuum Cryopump CP2 BROOKS OB-8
Vacuum Cryopump CP3 BROOKS OB-10
Vacuum Cryopump CP7 BROOKS OB-250F
Vacuum Cryopump CP8 BROOKS OB-250F
Vacuum STP-2203C TP1
Vacuum STP-A803C TP4
Vacuum STP-A1303C TP5
Vacuum STP-A803C TP10
Vacuum STP-A1303C TP11
Vacuum STP-A803C TP12
Manuals included.
SEN / SUMITOMO EATON NOVA NV-GSD-HE3 is a high-performance high-energy ion implanter with monitor technology. This device is able to offer controlled and efficient implantation of heavy ions, such as arsenic, gallium, and indium, which are used in semiconductor manufacturing. This implanter also provides ultra-precise imprinting with extremely fast high-voltage switching for precision implantation control. SEN NV-GSD-HE3 can accept a wide range of materials, including metallic and inorganic materials, as well as other compounds and substrates. It allows for high-precision ion acceleration and beam control with a broad range of energy and dose settings. The device features an ergonomic design for maximum efficiency and safety. The device is equipped with an advanced beam-monitoring system, which uses high-precision detectors to detect beam drift and contamination. This feature helps ensure the highest quality implantation of materials. This device has a high-precision ion source, high-accuracy beam optics, accurate beam transport, and high-precision UV optics. It is built from high-quality materials for durability and high performance. The device provides precise control over the amounts and locations of ions released for highly accurate ion implantation. One of the most unique features of SUMITOMO EATON NOVA NV GSD-HE3 is its ability to measure the dose of the beam in real time directly. This technology and capacity enables users to make adjustments to their settings like they are changing the output of their reticle's electron-beam current. The device also features a higher throughput rate, which increases productivity. In addition, this device offers closed-loop feedback regulation that allows users to adjust the beam-movement speed with high accuracy. The device can also be used with a wide range of pattern generators for various types of implants, such as line, uniform, and shape implantation. The device is designed for a wide range of applications, including the treatment of semiconductor wafers, the annealing of inorganic material, and the fabrication of substrate films. It can also be used to fabricate thin films and to control the implantation of heavy ions and charge exchange elements. NV GSD-HE3 provides highly advanced implantation technology and performance in a safe and easy-to-use package. This device is ideal for a variety of implantation and processing applications and provides high-accuracy, reliable, and repeatable implantations. This reliable and versatile device provides consistent performance, safety, and efficiency in the implantation of heavy ions and other materials.
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