Used SEN / SUMITOMO EATON NOVA NV-GSD-MC3 #9144965 for sale

SEN / SUMITOMO EATON NOVA NV-GSD-MC3
ID: 9144965
Wafer Size: 8"
High energy ion implanter, 8".
SEN / SUMITOMO EATON NOVA NV-GSD-MC3 is an ion implanter and monitor equipment used for advanced semiconductor processing. It is designed for low current, high resolution implantation and can be tailored to the needs of a variety of process steps and ion sources. The system integrates a number of features such as temperature and pressure control, energy modulation, beam blocking, and current integration to ensure the best process results. SEN NV-GSD-MC3 is a 20 cm ingot source ion implanter with a 70 cm control chamber, allowing for a wide range of implant parameters and implementation techniques. It can be used to create both shallow and deep junction implanting, as well as providing low-current high-resolution implanting. The unit includes a digital ion monitor to ensure accurate dosage and containment of ions. In addition to its ability to create a wide range of implant parameters and techniques, the machine also comes equipped with a high-voltage power supply, integrated mass flow controller, and temperature and pressure control tool. This allows for the highest process stability and accuracy, as well as the optimum implant implantation process. High uniformity and controllable energy distributions across the wafer are maintained due to the implementation of a variety of beam blocking techniques, such as beam splitting or scattering. The asset also uses advanced algorithms to control gas homogeneous temperature distribution in the plasma, which helps to enhance process stability and productivity. Additionally, the model has the ability to integrate the current from multiple sources, as well as monitor and analyze the implant beams with a digital ion monitor. SUMITOMO EATON NOVA NV-GSD-MC3 is an advanced implantation equipment designed to provide advanced implant performance and control. It is suitable for a range of applications, including shallow and deep junction implantation, as well as low-current high-resolution implanting. The system is designed to provide optimum process stability and accuracy with a variety of beam blocking techniques, temperature and pressure control, and current integration.
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