Used ULVAC IPZ-9001 #293675960 for sale
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ID: 293675960
Wafer Size: 6"
Vintage: 1995
Ion implanter, 6"
Monitor controller
(2) Helium compressors
Oscilloscope
Scan chamber
Endstation
Platen
(2) Red box chambers
Red box
Flow meter rack
Main controller, PD
Power rack
Rotary pump1
PMB001CM Rotary pump, D‑750DK Drive
(3) Door panels
Set of floor panel
Pallet 1:
(4) Lamp bulbs
(4) Lamp upper covers
(6) Ion gauges
(3) Ion gauge covers
Isolation tube
Divider
Acceleration tube
ADIXEN Pascal Rotary vane pump, frame
Pallet 2:
Oil trance
Manometer assembly
Pallet 3:
High‑voltage Stack
(2) Earth bars
Pallet 4:
Foot base plate
Docking bracket
(4) Covers
Pallet 5:
UL180P5G1222 High‑voltage power supply, base assembly
Exhaust duct assembly
Box
1995 vintage.
ULVAC IPZ-9001 is a state-of-the-art ion implanter and monitor designed for advanced semiconductor manufacturing applications. This instrument is a critical tool for doping semiconductor materials with precise amounts of impurities to enable the creation of high-performance integrated circuits. At the core of IPZ-9001 is its ion implantation equipment, which utilizes a sophisticated process to introduce dopant ions into the surface of a semiconductor substrate. This process involves generating a beam of high-energy positively charged ions, accelerating them to high velocities, and then implanting them into the target material. The ions penetrate the surface of the substrate, altering its electrical properties and creating the desired doping profile. One of the key features of ULVAC IPZ-9001 is its advanced beamline design, which ensures precise control over the ion beam parameters. The system is equipped with a set of electrostatic and magnetic lenses that allow for accurate focusing and steering of the ion beam. This level of control is essential for achieving the exact dopant concentrations and distribution profiles required for cutting-edge semiconductor devices. Another important aspect of IPZ-9001 is its high-energy ion source, which is capable of generating ions with energies ranging from a few keV to hundreds of keV. This wide range of ion energies allows for flexibility in doping various types of semiconductor materials and structures. Additionally, the unit features a versatile ion species selection capability, enabling the use of different dopant elements to tailor the electrical properties of the semiconductor device. In terms of monitoring and control, ULVAC IPZ-9001 is equipped with a comprehensive suite of diagnostics and feedback mechanisms. The machine features advanced beam current and energy monitoring sensors that provide real-time data on the ion beam parameters. This information is essential for ensuring the stability and consistency of the ion implantation process and for detecting any deviations from the desired doping specifications. Moreover, IPZ-9001 incorporates advanced automation and software control features for efficient operation and process optimization. The tool is equipped with intuitive user interfaces and software tools that enable users to program and execute complex ion implantation recipes with ease. Additionally, the asset can be integrated into a larger semiconductor manufacturing line, providing seamless data exchange and control connectivity. Overall, ULVAC IPZ-9001 represents a cutting-edge solution for ion implantation in semiconductor manufacturing. Its advanced beamline design, high-energy ion source, monitoring capabilities, and automation features make it an indispensable tool for achieving the precise doping profiles required for next-generation semiconductor devices. With its high performance and versatility, IPZ-9001 is poised to drive innovation and enable the development of advanced semiconductor technologies.
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